Preparation method of high-purity silicon carbide and corresponding high-purity silicon carbide

Abstract

The invention discloses a preparation method for high-purity silicon carbide. The preparation method comprises the following steps: S1, placing high-purity carbon powder in a graphite crucible, and purifying the high-purity carbon powder by using a high-temperature vacuum method; and S2, putting blocky silicon into the graphite crucible, heating the graphite crucible to melt the blocky silicon, rotating the graphite crucible to uniformly mix the high-purity carbon powder and the blocky silicon, and conducting reacting to synthesize the high-purity silicon carbide. According the invention, the blocky silicon is used for replacing silicon powder, and the purity of the blocky silicon is much higher than the purity of the silicon powder; after bulk silicon is melted into liquid silicon, convection is formed in a silicon solution through high-speed rotation of the graphite crucible, high-purity carbon powder can be uniformly distributed in the silicon solution, high-purity silicon carbide with high purity and high synthesis degree can be formed after cooling, and the purity of the high-purity silicon carbide is generally higher than 99.999%.

Description

technical field [0001] The invention relates to the field of silicon carbide manufacturing, in particular to a method for preparing high-purity silicon carbide and the corresponding high-purity silicon carbide. Background technique [0002] The development and progress of semiconductor materials is the core key technology related to the fate of the country and international influence. As one of the important representatives of the third-generation semiconductor materials, silicon carbide single crystal materials have become a hot spot for future semiconductor materials due to their large band gap, high saturation electron mobility, strong breakdown field, and high thermal conductivity; therefore The synthesis of high-purity silicon carbide powder is one of the core key technologies. [0003] At present, the mainstream high-purity silicon carbide powder synthesis method mainly adopts high-temperature self-propagating method and gas phase method. The high-temperature self-pr...

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Problems solved by technology

[0006] (2) The current method of using silicon powder and carbon powder to synthesize silicon carbide powder usually uses physical mixing to mix silicon powder and carbon powder before the reaction; due to the uneven particle size of silicon powder and carbon powder, physical mixing is difficult to achieve Fully uniform, silicon carbide powder synthesized by reaction, mixed with more unreacted carbon powder

[0007] (3) At present, the synthesis of silicon carbide powder generally requires a high-temperature reaction above 2000 ° C, which consumes more energy and is not conducive to environmental protection

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