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Auxiliary precipitation device for silicon-based photovoltaic device surface electrode material

A photovoltaic device and precipitation device technology, applied in photovoltaic power generation, semiconductor devices, circuits, etc., can solve the problems of unfavorable nano-silica modification and use, low silica activation index, low specific surface area, etc., to facilitate the preparation and modification, improved hydrophobicity, and easy operation

Inactive Publication Date: 2021-12-03
徐州金琳光电材料产业研究院有限公司
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Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the existing device stirring preparation method is too single, the specific surface area is low, the activation index of silicon dioxide is low, it is not conducive to the modification and use of nano silicon dioxide, the preparation effect is poor, and the work efficiency is low. However, the proposed auxiliary deposition device for surface electrode materials of silicon-based photovoltaic devices

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  • Auxiliary precipitation device for silicon-based photovoltaic device surface electrode material
  • Auxiliary precipitation device for silicon-based photovoltaic device surface electrode material
  • Auxiliary precipitation device for silicon-based photovoltaic device surface electrode material

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Embodiment Construction

[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention.

[0025] refer to Figure 1-6 , an embodiment provided by this scheme: an auxiliary precipitation device for surface electrode materials of silicon-based photovoltaic devices, including a box body 1, the top of the box body 1 is fixedly connected with a controller 2, an ultrasonic cleaner 3 and a motor 4, and the box body 1 The inner support plate 5 is fixedly connected, and the top of the support plate 5 is rotatably connected with a horizontally arranged horizontal shaft 6. Two first cams 7 are fixedly connected to the horizontal shaft 6. The top of the support plate 5 is provided with a mixing box 8, two The first cam 7 is rollingly connected with the bottom of the ...

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Abstract

The invention discloses an auxiliary precipitation device for a silicon-based photovoltaic device surface electrode material, relates to the technical field of silicon-based photovoltaic production equipment, and aims to solve problems that an existing device is too single in stirring preparation mode, low in specific surface area, low in silicon dioxide activation index, not beneficial to modification and use of nano silicon dioxide, poor in preparation effect and low in working efficiency. According to the technical scheme, the device comprises a box body, a controller, an ultrasonic cleaner and a motor are fixedly connected to the top of the box body, a supporting plate is fixedly connected into the box body, a horizontally-arranged transverse shaft is rotationally connected to the top of the supporting plate, and two first cams are fixedly connected to the transverse shaft. The device is reasonable in structural design and simple to operate, an ultrasonic-assisted precipitation method is more beneficial to preparation and modification of nano silicon dioxide, the hydrophobicity of the modified silicon dioxide is improved, the activation index of nano particles reaches 100%, the using effect is good, and the working efficiency is high.

Description

technical field [0001] The invention relates to the technical field of silicon-based photovoltaic production equipment, in particular to an auxiliary precipitation device for surface electrode materials of silicon-based photovoltaic devices. Background technique [0002] Silicon-based photovoltaics generally refer to the field of new energy. There are two main forms of solar energy utilization: photothermal and photoelectric. At present, most electrode materials on the market use silicon dioxide. The silicon dioxide nanopowder produced by the process is ultrasonically After assisted precipitation modification, it has good hydrophobicity, and ultrasonic technology has broad application prospects in the preparation of nanomaterials. After retrieval, the Chinese patent with the authorized notification number CN213446245U discloses a silicon dioxide preparation equipment, including a reaction box, the two ends of the top of the reaction box are fixedly equipped with a storage bo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804Y02E10/547Y02P70/50
Inventor 周祥
Owner 徐州金琳光电材料产业研究院有限公司
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