A graphene film etching device

Abstract

The invention discloses a graphene thin film etching device, which includes an outer casing, an etching device and a control device. The promotion device, the inner bottom surface of the etched disk is provided with a long convex groove, and the long convex groove is equidistantly distributed with respect to the axial direction of the etched disk. a through hole, and a photoresistor is fixedly installed inside the bottom end of the strip convex groove. In this graphene film etching device, the liquid volume and rate of the etching liquid injected into the etching disc are proportional to the area of ​​the graphene film, thereby realizing the automatic control of the injection liquid volume and rate of the etching liquid. The purpose is to achieve the effect of intelligence, and at the same time solve the problem of violent oscillation of the liquid level caused by the poor injection volume and injection rate of the etching solution, and further stabilize the graphene film.

Description

technical field [0001] The invention relates to the technical field of graphene films, in particular to a graphene film etching device. Background technique [0002] Nowadays, the etching of graphene film is mainly carried out by chemical vapor deposition method. When using etching solution to etch graphene film, there are many external factors that need to be controlled. Therefore, the graphene film etching device is limited by external factors. Control regulation is critical. [0003] The existing graphene film etching device has the following technical defects in use: one, when the graphene film is put into the etching solution, dynamic potential energy will be generated due to the effect of inertia, and then the film and the etching solution will be relatively If the movement is not stopped in time, the film will collide with the inner wall and the outer ring of the film will be damaged, resulting in a high scrap rate of the film, which greatly affects the production ef...

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Problems solved by technology

[0003] The existing graphene film etching device has the following technical defects in use: one, when the graphene film is put into the etching solution, dynamic potential energy will be generated due to the effect of inertia, and then the film and the etching solution will be relatively If the movement is not stopped in time, the film will collide with the inner wall and the outer ring of the film will be damaged, resulting in a high scrap rate of the film, which greatly affects the production efficiency of the film; Chemical reaction, because the etchant is in a static state, which leads to less exchange between the solutions, making the concentration of the upper etchant lower and the concentration of the lower etchant higher, which directly affects the etching efficiency and etching quality. It will also waste the etchant of the lower layer

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