Preparation method of group Ⅲ oxide thin film based on chamfered corner substrate and its epitaxial wafer

Abstract

The present disclosure provides a method for preparing a group III oxide thin film based on a chamfered corner substrate and an epitaxial wafer thereof, the preparation method comprising: epitaxial buffer layer (2) on a continuous stepped substrate (1) with chamfered corners; An epitaxial layer (3) is prepared on the buffer layer (2); wherein, the epitaxial layer (3) is a single crystal Group III oxide thin film, the buffer layer (2) and the substrate (1) are heterogeneous, and the buffer layer (2) and The epitaxial layer (3) is homogeneous. By epitaxial buffer layer on a continuous atomic-level stepped substrate with chamfered corners, the adatoms of the reaction source can be promoted to grow at the edge of the step to form a growth pattern with consistent orientation, and a complete single-crystal buffer layer film can be obtained. A high-quality single-crystal epitaxial layer film is homoepitaxially grown on the single-crystal buffer layer film. The method has strong process compatibility, reduces the cost of producing high-quality single crystal group III oxide thin films, and facilitates its popularization and use.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, and in particular, to a method for preparing a group III oxide thin film based on a chamfered corner substrate and an epitaxial wafer thereof. Background technique [0002] Ga 2 O 3 And its homologous oxides are a new generation of ultra-wide bandgap semiconductor materials, which have great application prospects in power electronic devices, microwave devices and deep ultraviolet optoelectronic devices. [0003] High-quality Ga 2 O 3 The thin film mainly relies on homoepitaxy, which requires high-quality single-crystal Ga 2 O 3 The substrate is expensive, which is not conducive to mass production. At the same time, the homoepitaxial growth and the single choice of substrate limit the Ga 2 O 3 Application of thin films to fabricate heterojunction devices. In the existing planar heteroepitaxial substrate, the source gas molecules can diffuse freely on the substrate plane du...

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Problems solved by technology

[0003] High-quality Ga 2 o 3 Thin films mainly rely on homoepitaxial growth, and the required high-quality single crystal Ga 2 o 3 Substrate, expensive, not conducive to mass production

At the same time, homoepitaxial growth and single substrate selection limit Ga 2 o 3 Application of Thin Films to Fabricate Heterojunction Devices

However, in the existing planar heteroepitaxial substrates, the source gas molecules can freely diffuse on the substrate plane during the growth process, and it is easy to produce Ga substrates with different crystal orientations. 2 o 3 crystal, it is difficult to obtain a complete high-quality single crystal film

And the poor electrical conductivity and thermal conductivity of existing substrate materials limit the application of epitaxial wafers in vertical devices and affect the performance of devices under high current operation

At the same time, the substrate and Ga 2 o 3 The thermal mismatch between them is large, resulting in a large number of defects in the buffer layer and epitaxial layer, making it difficult to obtain high-quality single crystal thin films

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