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Bidirectional SCR device triggered by diode

A diode and diode string technology, applied in the field of bidirectional thyristor rectifier devices, can solve the problem of weak reverse conductivity of SCR

Pending Publication Date: 2021-09-21
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a diode-triggered bidirectional SCR device, which solves the problem of weak SCR reverse conductivity existing in the prior art

Method used

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  • Bidirectional SCR device triggered by diode
  • Bidirectional SCR device triggered by diode
  • Bidirectional SCR device triggered by diode

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Embodiment Construction

[0020] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0021] like figure 1 As shown, the two-way SCR device of the present invention is, and the structural equivalent circuit thereof is, including bipolar transistors PNP1, NPN1, NPN2, the embedded diode D1, and diode D2, an external diode string DS0, an external diode D3 and diode D4 composition. The diode D1 is essentially the base-emitting pole junction when the bipolar transistor PNP1 is forwarded, and is also the base-collector of the bipolar transistor NPN2; the diode D2 is essentially bipolar transistor PNP1 in the reverse guide The base-emitting pole junction is also the base-collector node of the bipolar transistor NPN1; the diode D1, the diode string DS0, and the diode D3 are used to trigger SCR, diode D2, and diode string when the ESD event occurs. DS0, diode D4 is used to trigger SCR when the reverse ESD event occurs; the trigger voltage of...

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Abstract

The invention discloses a bidirectional SCR device triggered by a diode. A deep N well is arranged on a P-type substrate, a first P well, an N well and a second P well are sequentially arranged on the deep N well, a first groove is formed in the upper surface of the first P well, a second groove is formed in the junction of the first P well and the N well, a third groove is formed in the junction of the N well and the second P well, and a fourth groove is formed in the upper surface of the second P well; a first P+ injection region and a first N+ injection region are arranged on the two sides of the first groove, a first N+ injection region and a second N+ injection region are arranged on the two sides of the second groove, a second N+ injection region and a third N+ injection region are arranged on the two sides of the third groove, and a third N+ injection region and a second P+ injection region are arranged on the two sides of the fourth groove; the first P+ injection region and the first N+ injection region are connected with the anode, and the third N+ injection region and the second P+ injection region are connected with the cathode; and the second N+ injection region is connected with a diode D3 and a diode D4 through a diode string DS0. The SCR device is high in triggering speed.

Description

Technical field [0001] The present invention belongs to the field of integrated circuit electrostatic discharge protection technology, and the two-way SCR device triggered by a diode, also known as a diode triggering a two-way controllable silicon rectifier (SCR) device. Background technique [0002] With the rapid development of the integrated circuit industry, the characteristic size of the components is constantly decreasing, and the oxide layer is getting thinner. The integrated circuit components are becoming more and more sensitive to electrostatic discharge, and there are a large integrated circuit every year due to electrostatic discharge (ESD). Incident, some simple ESD protection has not been able to meet the high requirements for ESD protection for industrial integrated circuits. Therefore, there is a need to design a new type of ESD protection circuit to adapt to the development of the semiconductor industry. [0003] In the ESD protection of the integrated circuit, t...

Claims

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Application Information

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IPC IPC(8): H01L29/74H01L29/06H01L27/02
CPCH01L29/7404H01L29/0603H01L29/0684H01L27/0248
Inventor 杨兆年毛盼杨潇涵袁璐王兴佳余宁梅
Owner XIAN UNIV OF TECH
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