Infrared detector pixel structure and infrared detector

Abstract

The invention relates to an infrared detector pixel structure and an infrared detector. The infrared detector pixel structure comprises a substrate, a first structure layer and a second structure layer, wherein the first structure layer and the second structure layer are sequentially arranged on the substrate; the first structure layer comprises at least two beam structures, each beam structure is connected with the middle supporting structure and the micro-bridge column, and in a beam path from the middle supporting structure to the corresponding micro-bridge column, the two parallel beam structures intersecting at the same node are the first half-bridge structure and the second half-bridge structure correspondingly; the first half-bridge structure and the second half-bridge structure form a thermal symmetry structure; the length of the first half-bridge structure is larger than that of the second half-bridge structure, and the thickness of the first half-bridge structure is larger than that of the second half-bridge structure in the direction perpendicular to the substrate; and the first structure layer comprises a first electrode layer, the second structure layer comprises a second electrode layer and a thermosensitive layer, and the second electrode layer is electrically connected to the micro-bridge column through the first electrode layer. The infrared detector pixel structure can improve the NETD performance of the infrared detector.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to an infrared detector pixel structure and an infrared detector. Background technique [0002] The working principle of the infrared detector is to convert the received infrared radiation signal into a thermal signal, then convert the thermal signal into an electrical signal, and then output the electrical signal after processing. Temperature resolution or sensitivity is usually called Noise Equivalent Temperature Difference (NETD), which is the minimum temperature difference that an infrared detector can detect above its background noise, and is a measure of the performance of an infrared detector. Important parameters. [0003] In current infrared detectors, the beam structure will affect the size of the thermosensitive layer, the area of ​​the thermosensitive layer is small, and the radiation absorption of the infrared detector pixel structure is low, result...

AI Technical Summary

Problems solved by technology

[0003] In current infrared detectors, the beam structure will affect the size of the thermosensitive layer, the area of ​​the thermosensitive layer is small, and the radiation absorption of the infrared detector pixel structure is low, resulting in poor NETD performance of the infrared detector

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