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Preparation method and application of single-atom lanthanum-supported nitrogen-doped graphene two-dimensional materials

A technology of nitrogen-doped graphene and two-dimensional materials, which is applied to structural parts, electrical components, battery electrodes, etc., can solve the problems of destabilizing graphene and transition metal conductive empty electron orbitals, etc., to achieve abundant reserves, Improved electrochemical performance and good environmental protection

Active Publication Date: 2022-03-25
JIANGSU UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Transition metals have good electrical conductivity and many empty electron orbitals. When introduced into graphene, it will activate graphene well, but if the doping amount is too large, it will destroy the stability of graphene itself.

Method used

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  • Preparation method and application of single-atom lanthanum-supported nitrogen-doped graphene two-dimensional materials

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Embodiment 1

[0036] A method for preparing a single-atom lanthanum-supported nitrogen-doped graphene two-dimensional material, comprising the following specific steps:

[0037] 1. Preparation of nitrogen-doped graphene:

[0038] (1) ultrasonically disperse 1.0 g of graphene oxide and 1.0 g of melamine in 10 mL of deionized water to obtain a dispersion; in this step, the temperature of the ultrasonic wave is 25° C., the ultrasonic power is 800 W, and the ultrasonic time is 1 hour;

[0039] (2) drying the above dispersion at 50°C to obtain a mixture;

[0040] (3) Under the protection of an inert gas, the obtained mixture is placed in a tube furnace and calcined at a high temperature of 600 ° C for 1 hour to obtain nitrogen-doped graphene;

[0041] 2. Preparation of lanthanum-supported nitrogen-doped graphene:

[0042] (1) The obtained nitrogen-doped graphene is ultrasonically dispersed in deionized water to obtain a suspension of nitrogen-doped graphene; in this step, the temperature of th...

Embodiment 2

[0051]A method for preparing a single-atom lanthanum-supported nitrogen-doped graphene two-dimensional material, comprising the following specific steps:

[0052] 1. Preparation of nitrogen-doped graphene:

[0053] (1) ultrasonically disperse 0.1g of graphene oxide and 0.2g of melamine in 10mL of deionized water to obtain a dispersion; in this step, the temperature of the ultrasonic wave is 20°C, the ultrasonic power is 1000W, and the ultrasonic time is 2 hours;

[0054] (2) drying the above dispersion at 60°C to obtain a mixture;

[0055] (3) Under the protection of an inert gas, the obtained mixture is placed in a tube furnace and calcined at a high temperature of 650° C. for 2 hours to obtain nitrogen-doped graphene;

[0056] 2. Preparation of lanthanum-supported nitrogen-doped graphene:

[0057] (1) The obtained nitrogen-doped graphene is ultrasonically dispersed in deionized water to obtain a suspension of nitrogen-doped graphene; in this step, the temperature of the ul...

Embodiment 3

[0066] A method for preparing a single-atom lanthanum-supported nitrogen-doped graphene two-dimensional material, comprising the following specific steps:

[0067] 1. Preparation of nitrogen-doped graphene:

[0068] (1) 0.5 g of graphene oxide and 0.8 g of melamine are ultrasonically dispersed in 10 mL of deionized water to obtain a dispersion; in this step, the temperature of the ultrasonic wave is 30° C., the ultrasonic power is 900 W, and the ultrasonic time is 0.5 hours;

[0069] (2) drying the above dispersion at 70°C to obtain a mixture;

[0070] (3) Under the protection of an inert gas, the obtained mixture is placed in a tube furnace and calcined at a high temperature of 700 ° C for 2 hours to obtain nitrogen-doped graphene;

[0071] 2. Preparation of lanthanum-supported nitrogen-doped graphene:

[0072] (1) The obtained nitrogen-doped graphene is ultrasonically dispersed in deionized water to obtain a suspension of nitrogen-doped graphene; in this step, the temperat...

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Abstract

The invention discloses a preparation method and application of a single-atom lanthanum-supported nitrogen-doped graphene two-dimensional material; preparation: 1. Preparation of nitrogen-doped graphene: (1) ultrasonically dispersing graphene oxide and a nitrogen source in a solvent , to obtain a dispersion; (2) drying the dispersion to obtain a mixture; (3) under the protection of an inert gas, calcining the mixture at a high temperature to obtain nitrogen-doped graphene; two, lanthanum-loaded nitrogen-doped graphite Preparation of ene: (1) ultrasonically dispersing the nitrogen-doped graphene in deionized water to obtain a suspension of nitrogen-doped graphene; (2) dissolving the lanthanum source to obtain an aqueous solution containing metal lanthanum; (3) The aqueous solution of the metal lanthanum is added dropwise to the suspension of the nitrogen-doped graphene and stirred, then heated for reaction, and then calcined at a high temperature under the protection of an inert gas to obtain a two-dimensional monoatomic lanthanum-supported nitrogen-doped graphene Material. Applications: Use the as-prepared materials for oxygen reduction reactions or assemble into metal-air batteries.

Description

technical field [0001] The invention relates to the technical field of carbon nanocomposite materials, in particular to a preparation method and application of a single-atom lanthanum-supported nitrogen-doped graphene two-dimensional material. Background technique [0002] Graphene has low cost, good electrical conductivity, and good environmental protection, and can be used in the field of electrocatalysis. However, due to too few active sites in traditional graphene, its electrocatalytic activity is low. The electronegativity of nitrogen atoms is greater than that of carbon, and doping in graphene will change the electron cloud distribution of carbon atoms, thereby activating graphene. [0003] Transition metals have good electrical conductivity and many empty electron orbitals. When introduced into graphene, graphene will be well activated, but if the doping amount is too large, the stability of graphene itself will be destroyed. In order to improve the utilization rate...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01M4/88H01M4/90
CPCH01M4/8825H01M4/90H01M4/9075Y02E60/50
Inventor 杨洲冯思慧缪雨杭陈含冰
Owner JIANGSU UNIV OF TECH
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