Preparation method of green light epitaxial structure

Abstract

The invention relates to the technical field of flip LED chips, and discloses a preparation method of a green light epitaxial structure. A substrate, a low-temperature AlGaN buffer layer, an N-AlGaN barrier layer, multi-period Si-doped GaN, a superlattice InGaN / GaN, a multi-period quantum well, a barrier layer, Mg-doped P-GaN and a contact layer are sequentially grown from bottom to top, and the multi-period quantum well adopts different In component structures of GaN / In<x1>Ga<1-x1>N / In<X>2Ga<1-x2>N / GaN. Therefore, through the quantum well segmented growth structure, well-barrier mismatch can be improved, the stark effect can be relieved, the luminous efficiency can be improved, and the growth yield can be improved.

Description

technical field [0001] The invention relates to the technical field of flip-chip LED chips, in particular to a method for preparing a green light epitaxial structure. Background technique [0002] Green LEDs have great application value in display, lighting, medical beauty, and plant photosynthesis. At the same time, they have many advantages such as small size, simple structure, controllable wavelength, good integration, long life, low energy consumption, and zero pollution. . For the future development of the LED industry tends to smaller size Mini LED and Micro LED, green LED is an important part of the three primary colors RGB, the development and industrialization of green light epitaxy technology will have huge social and economic prospects . [0003] In traditional GaN-based green LEDs, the simple structure of the InGaN / GaN MQW layer is used as the active region, which is characterized by the use of GaN material as the barrier layer to confine carriers. The quantum...

AI Technical Summary

Problems solved by technology

The quantum well structure of this structure is simple, but there is no distinction between the confinement of electrons and holes, and there is a strong quantum confinement Stark effect (QCSE) in the well. Due to the low mobility of holes in GaN materials, green InGaN The potential well of the quantum well is relatively deep, so that the holes injected from the P-type region are easily accumulated in the quantum well near the P-type region, while the hole concentration in the well near the N-type region is low, and the luminescence is weak; On the one hand, they are basically two-inch green epitaxy or four-inch AlN epitaxy, and the cost is relatively high

In addition, there is also a growth method of blue light well plus green light well, but the temperature control is difficult, and the growth yield is difficult to guarantee

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