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Method for calculating adsorption of C5F10O insulating gas on copper surface under action of electric field

A technology of insulating gas and copper surface, applied in the direction of computational theoretical chemistry, design optimization/simulation, special data processing applications, etc., to achieve the effect of simple operation, low cost and high reference value

Pending Publication Date: 2021-08-17
ELECTRIC POWER RESEARCH INSTITUTE OF STATE GRID SHANDONG ELECTRIC POWER COMPANY +1
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Problems solved by technology

Therefore, in the prior art, in addition to the actual reaction test, there is no low-cost, fast and accurate simulation method that can provide guidance for the safe and normal operation of the power system

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  • Method for calculating adsorption of C5F10O insulating gas on copper surface under action of electric field
  • Method for calculating adsorption of C5F10O insulating gas on copper surface under action of electric field
  • Method for calculating adsorption of C5F10O insulating gas on copper surface under action of electric field

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Embodiment Construction

[0041] The application will be further described below in conjunction with the accompanying drawings. The following examples are only used to illustrate the technical solutions of the present invention more clearly, but not to limit the protection scope of the present application.

[0042] The present invention proposes a method for calculating C in the electric field 5 f 10 The method of adsorption of O insulating gas on the copper surface can be used for C 5 f 10 O simulates the situation in actual use. The present invention can explore the C 5 f 10 Adsorption behavior of O insulating gas on copper surface.

[0043] figure 1 Calculation of C under the action of the electric field for the present invention 5 f 10 Schematic flow chart of the steps in the method for the adsorption of O insulating gas on the copper surface. Such as figure 1 As shown, a calculation of C under the action of electric field 5 f 10 A method for adsorbing an insulating gas on a copper sur...

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Abstract

The invention relates to a method for calculating adsorption of C5F10O insulating gas on a copper surface under the action of an electric field, which is characterized by comprising the following steps of: 1, establishing a C5F10O gas molecular model and a copper surface model in material calculation software; 2, optimizing the structure of the model obtained in the step 1 by using a molecular dynamics simulation method, and calculating the adsorption energy and charge transfer amount of the C5F10O gas on the copper surface; 3, applying electric fields with different intensities to the optimized model obtained in the step 2, and calculating the adsorption energy and charge transfer quantity of the C5F10O gas on the copper surface based on the electric fields with different intensities; and 4, analyzing the adsorption characteristics of the C5F10O insulating gas on the copper surface based on the adsorption energy and charge transfer amount of the C5F10O gas on the copper surface obtained in the step 2 and the step 3. The method is easy to operate, low in cost and high in accuracy.

Description

technical field [0001] The present invention relates to molecular dynamics simulation calculation, more specifically, relates to a method for calculating C under the action of an electric field 5 f 10 O method of insulating gas adsorption on copper surface. Background technique [0002] In the prior art, sulfur hexafluoride gas is widely used in medium and high voltage electrical equipment because of its excellent insulation properties and arc extinguishing properties. However, since sulfur hexafluoride gas has a significant greenhouse effect, finding an insulating gas that can replace sulfur hexafluoride is a current research hotspot. C 5 f 10 The dielectric strength of O is SF 6 Twice that of , and its Global Warming Potential (GWP, Global Warming Potential) is only 1, so C 5 f 10 O gas is considered as a potential insulating gas that can be used in high-voltage equipment. [0003] However, since C 5 f 10 Compared with sulfur hexafluoride gas, O gas has a higher ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/20G16C10/00
CPCG06F30/20G16C10/00
Inventor 齐国栋谢连科张永巩泉泉臧玉魏张国英亓秋波郝亚楠张瑞强陈义民
Owner ELECTRIC POWER RESEARCH INSTITUTE OF STATE GRID SHANDONG ELECTRIC POWER COMPANY
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