Semiconductor device, super junction structure for semiconductor device and manufacturing method of super junction structure

Abstract

The invention discloses a semiconductor device, a super junction structure for the semiconductor device and a manufacturing method of the super junction structure. The super junction structure for the semiconductor device comprises a plurality of first conductive type columns and second conductive type columns which are alternately arranged in a second direction, wherein the first conductive type columns and the second conductive type columns extend in the first direction, the first conductive type columns make contact with the adjacent second conductive type columns, and the doping concentrations in the first conductive type columns and / or the second conductive type columns are different. The super junction is formed by a method of respectively forming a first conductive type column and a second conductive type column, and the doping concentration of the first conductive type column and the doping concentration of the second conductive type column can be respectively controlled. The charge balance between the first conductive type column and the second conductive type column is ensured, the doping concentration in the first conductive type column and / or the second conductive type column is different, and the breakdown voltage and the avalanche energy of the super junction device can be improved.

Description

technical field [0001] The invention relates to the field of design and manufacture of semiconductor devices, in particular to a semiconductor device, a super junction structure for the semiconductor device and a manufacturing method thereof. Background technique [0002] In semiconductor devices including superjunctions, such as figure 1 As shown, the super junction is composed of alternately arranged P-type thin layers (also called P-type pillars) and N-type thin layers (also called N-type pillars) formed in a semiconductor substrate. The depletion layer formed by the thin layer is matched to support the reverse withstand voltage while maintaining a small on-resistance. The carrier distribution of P-type impurities in the P-type thin layer and the carrier distribution of N-type impurities in the N-type thin layer and their matching will affect the characteristics of the device including its reverse breakdown voltage and current handling capability. [0003] At present, t...

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Problems solved by technology

[0004] For this reason, the present invention proposes a power semiconductor device and its manufacturing method to solve the problem of poor consistency of the manufactured super junction and low avalanche energy of the super junction power device due to the difficulty in precisely controlling the doping of the N-type epitaxial substrate

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