Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for measuring power bearing capacity of radio frequency device

A technology of radio frequency devices and measurement methods, applied in radio frequency circuit testing, measuring electricity, measuring devices, etc., can solve the problems of complex, energy-consuming and time-consuming test preparation, and reduce costs, reduce test preparation time, and shorten design and development. effect of time

Pending Publication Date: 2021-06-25
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the large number of chips on a multi-project wafer, this makes the process of building a dossier a complex process, which requires a lot of effort and time for test preparation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for measuring power bearing capacity of radio frequency device
  • Method for measuring power bearing capacity of radio frequency device
  • Method for measuring power bearing capacity of radio frequency device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Such as figure 1 As shown, a block of MPW includes three sub-areas, which are respectively areas A, B, and C. Each sub-area includes a plurality of chips to be tested, and each chip to be tested may include a series branch, a parallel branch road and ESD branch. Specifically, in area A there are multiple series branches of different designs, in area B there are multiple parallel branches of different designs, and in area C there are multiple ESD branches of different designs. Depend on figure 1 It can be seen that the distribution of the chips to be tested of different types (series branches of different designs, parallel branches of different designs and ESD branches of different designs) on the MPW is not regular, so that in the early stage test preparation, each type All tests need to confirm the corresponding chip position coordinates, and the whole test preparation work is relatively cumbersome, which affects the design and development time. Moreover, each type ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for measuring the power bearing capacity of a radio frequency device. The method comprises the following steps of providing a multi-project wafer which comprises at least two types of to-be-tested chips, establishing a test file, wherein the test file comprises at least two types of test conditions and test methods of the to-be-tested chips; and calling a test condition and a test method of the type of the current to-be-tested chip from the test file, measuring the power bearing capacity of the current to-be-tested chip, and detecting the type of the next to-be-tested chip so as to measure the power bearing capacity of all the to-be-tested chips. The file established by the method does not include the position coordinates of the to-be-tested chips distinguished and sorted according to different types, so that the earlier-stage test preparation time is shortened, the test preparation time is shortened, the test of the to-be-tested chips of different types is completed through one-time test, the test time is shortened, the design development time is shortened, and the appearance of a new product is accelerated.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit testing, in particular to a method for measuring the power carrying capacity of a radio frequency device. Background technique [0002] With the development of semiconductor technology, SOI technology has been widely used in radio frequency, especially the radio frequency switch occupies a certain market share, and has the advantage of being integrated with other modules, and will gain further growth expectations. In the design and development phase of the SOI structure, it is necessary to use MPW (Multi Project Wafer, multi-project wafer) to verify the power handling capability of the RF switch (usually by testing the power carrying capacity of the RF switch). Among them, MPW refers to the production of multiple chips on the same wafer. MPW includes multiple independent products (chips), and its purpose is to improve design efficiency and reduce production costs. [0003] In order...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/28
CPCG01R31/2822G01R31/2851G01R31/2886
Inventor 王磊
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com