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Resonator and method for manufacturing resonator

A manufacturing method and resonator technology, applied in impedance networks, electrical components, etc., can solve the problem that SAW resonators cannot meet the requirements of large-bandwidth communication, and achieve the effect of no stray FOM and large bandwidth

Pending Publication Date: 2021-06-11
GUANGDONG CANCHIP TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing SAW resonators as described above cannot meet the requirements of large bandwidth communication

Method used

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  • Resonator and method for manufacturing resonator
  • Resonator and method for manufacturing resonator
  • Resonator and method for manufacturing resonator

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Embodiment 1

[0049] Below, refer to Figure 1 to Figure 12 The resonator according to the present invention will be described.

[0050] First, use figure 1 The structure of the resonator according to the present invention will be described.

[0051] figure 1 is a schematic diagram of a resonator involved in the present invention. In the resonator of this embodiment, the material of the substrate 2 may be a high-sonic layer material, preferably SiC, SiN, diamond, Si and the like. The thickness of the substrate 2 can be adjusted according to product design, preferably 350 μm˜500 μm. A piezoelectric layer 1 is formed on a substrate 2 . The thickness of the piezoelectric layer 1 can be determined according to the wavelength λ of the acoustic wave excited by the electrode fingers (as an example, λ=1 μm), for example, it can be 0.1λ˜2λ. In this embodiment, the material of piezoelectric layer 1 is PMNT single crystal, its chemical formula (1-x)Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -xPbTiO 3 where x=0...

Embodiment 2

[0072] Below, refer to Figure 13 as well as Figure 14 A method for manufacturing the resonator according to the present invention will be described in detail.

[0073] Figure 13 is a schematic diagram of the manufacturing method of the resonator according to the present embodiment, and Figure 14 is a flowchart of the manufacturing method of the resonator according to the present embodiment.

[0074] The manufacturing method of the resonator in this embodiment starts with step S1401. In this step S1401, as Figure 13 As shown in a, a substrate 22 may be provided. The material of the substrate 22 may be a high-sonic layer material, preferably SiC, SiN, diamond, Si and the like. The thickness of the substrate 22 can be adjusted according to product design, preferably 350 μm˜500 μm.

[0075] Next, in step S1402, the piezoelectric layer 21 can be combined with the substrate 22 through low-temperature bonding, such as Figure 13 Shown in b. As an example, the low temper...

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Abstract

The present invention provides a resonator and a method for manufacturing the resonator, the resonator comprising: a substrate; a piezoelectric layer formed of a PMNT material and formed on the substrate; an electrode which is formed on the piezoelectric layer; and an oxide layer formed on the electrode and covering the electrode.

Description

technical field [0001] The present application relates to electronic devices, and more particularly to resonators and methods of manufacturing resonators. Background technique [0002] Surface acoustic wave (SAW: surface acoustic wave) devices are based on the piezoelectric effect of piezoelectric materials, electronic devices that use surface acoustic waves on the surface of piezoelectric materials to work, and use interdigital transducers formed on the surface of piezoelectric materials ( IDT: interdigital transducer) (a periodic structure of metal electrodes shaped like hands crossed) converts electrical input signals into surface acoustic waves and is a key component of today's communication devices. [0003] For a SAW resonator, various performances will have a great impact on its performance, and then affect the stability and service life of the entire device including the SAW resonator and even the entire system. In general, the center frequency f of the existing TC-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/15H03H3/02
CPCH03H9/15H03H3/02
Inventor 李红浪许欣柯亚兵
Owner GUANGDONG CANCHIP TECH CO LTD
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