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Gate drive circuit and display device

A gate drive circuit and gate drive technology, used in static indicators, instruments, etc., can solve the problem of not being able to fully adopt the gate drive circuit circuit structure, and achieve the effects of reducing leakage, improving stability, and enhancing amplitude.

Active Publication Date: 2021-06-04
KUSN INFOVISION OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing gate drive circuit is designed based on Enhance mode (enhanced mode), but the characteristic of IGZO is Depletion mode (depletion mode), so the gate drive circuit based on IGZO cannot fully adopt the circuit structure of the existing gate drive circuit , need to redesign the circuit structure, in this circuit structure, IGZO TFT realizes the function of GIA circuit, and can work normally

Method used

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  • Gate drive circuit and display device
  • Gate drive circuit and display device

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Embodiment Construction

[0060] Various embodiments of the invention will be described in more detail below with reference to the accompanying drawings. In the various drawings, the same elements are denoted by the same or similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown in the drawings.

[0061] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. In the following, many specific details of the present invention, such as structures, materials, dimensions, processes and techniques of components, are described for a clearer understanding of the present invention. However, the invention may be practiced without these specific details, as will be understood by those skilled in the art.

[0062] It should be understood that when describing the structure of a component, when a layer or ...

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Abstract

The invention discloses a gate drive circuit and a display device. The gate drive circuit disclosed by the invention comprises a first pre-charging module for charging a first node according to a starting signal; a second pre-charging module used for discharging the second node according to the transmission signal; a first bootstrap module which is connected with the first node and is used for generating and outputting a current-stage transmission signal and a current-stage driving signal according to a first clock signal; a second bootstrap module used for bootstrapping the second node according to the second low-level signal; a first pull-down and stability maintaining module which stabilizes the signal of the first node and the signal of the bootstrap module according to the third clock signal; and a second pull-down and stability maintenance module which is respectively connected with the first low-level signal input end, the second node and the bootstrap module, and stabilizes the bootstrap module according to the first low-level signal. According to the gate drive circuit and the display device disclosed by the invention, the bootstrap module and the pull-down and stability maintaining module are designed, and the gate drive circuit can be suitable for the IGZO process.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a gate drive circuit and a display device. Background technique [0002] IGZO (indium gallium zinc oxide, indium gallium zinc oxide) is an amorphous oxide containing indium, gallium and zinc. The carrier mobility is 20-30 times that of amorphous silicon, which can greatly improve TFT (Thin Film Transistor , Thin Film Transistor) charge and discharge the pixel electrode, improve the response speed of the pixel, and achieve a faster refresh rate. become possible. In addition, IGZO displays have higher energy efficiency levels and are more efficient due to the reduced number of transistors and increased light transmission per pixel. It is foreseeable that gate drive circuits and display devices based on IGZO will appear more and more widely. [0003] The existing large-scale GIA (gate in array, gate drive integrated in the array circuit) is made of amorphous silicon. The existi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G09G3/36
CPCG09G3/3677G09G3/3688
Inventor 柯中乔钟德镇廖家德郑会龙
Owner KUSN INFOVISION OPTOELECTRONICS
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