Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Power semiconductor device

A technology for power semiconductors and devices, which is applied in the fields of semiconductor devices, semiconductor/solid-state device components, and electric solid-state devices, etc., and can solve the problems of poor heat dissipation effect of power semiconductor devices, easy de-soldering of pins, and easy short-circuiting of pins. , to achieve the effect of improving surface heat dissipation, improving welding quality, and enhancing air flow efficiency

Inactive Publication Date: 2021-06-01
刘家宝
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a power semiconductor device to solve the problems in the prior art that the pins of the power semiconductor device are easy to desolder, short circuit between the pins, and the heat dissipation effect of the power semiconductor device is poor.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Power semiconductor device
  • Power semiconductor device
  • Power semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] see figure 1 , a power semiconductor device, comprising a power semiconductor device main body 1, the side end surface of the power semiconductor device main body 1 is provided with a wiring groove 12, the number of the wiring grooves 12 is two, and two groups of wiring grooves 12 are located on two sides of the power semiconductor device main body 1 At the top of the side, the side end surface of the wiring groove 12 is welded with a pin inner core 2, and the outer end of the pin inner core 2 is provided with a protective ceramic square tube 3, and the protective ceramic square tube 3 and the wiring groove 12 are connected by a high temperature resistant glue. A heat insulating pad 13 is connected, and a heat dissipation groove 11 is opened on the upper surface of the main body 1 of the power semiconductor device, and a heat dissipation film 111 is coated inside the heat dissipation groove 11 .

[0025] see figure 2 , the pin inner core 2 is an L-shaped silver cylind...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a power semiconductor device which comprises a power semiconductor device body, wiring grooves are formed in the side end face of the power semiconductor device body, the two groups of wiring grooves are located in the tops of the two sides of the power semiconductor device body, pin inner cores are arranged on the side end faces of the wiring grooves, and the outer ends of the pin inner cores are sleeved with protective ceramic square tubes. Heat insulation pads are arranged between the protective ceramic square tubes and the wiring grooves, a heat dissipation groove is formed in the upper end face of the power semiconductor device body, and a heat dissipation film is arranged in the heat dissipation groove. The outer end faces of the pin inner cores are sleeved with the protective ceramic square tubes, short circuit between the pin inner cores is avoided; meanwhile, the welding quality of the pin inner cores is improved, the power semiconductor device body is supported through the protective ceramic square tubes, and a gap is reserved between the power semiconductor device and a circuit board. And the graphene film is laid at the upper end of the power semiconductor device body, so that the heat dissipation effect of the power semiconductor device body is improved.

Description

technical field [0001] The invention belongs to the technical field of electronic devices, in particular to a power semiconductor device. Background technique [0002] Power Electronic Devices, also known as power semiconductor devices, are mainly used for high-power electronic devices in power conversion and control circuits of power equipment (usually referring to currents of tens to thousands of amps and voltages of hundreds of volts or more. , Power devices are used in almost all electronic manufacturing industries, including notebooks, PCs, servers, displays and various peripherals in the computer field; mobile phones, telephones and other various terminals and local end devices in the field of network communications; Traditional black and white home appliances and various digital products; industrial PCs in industrial control, various instruments and meters and various control equipment, etc., in addition to ensuring the normal operation of these equipment, power devic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/00H01L23/488H01L23/367H01L23/373H01L23/467
CPCH01L23/367H01L23/3738H01L23/467H01L23/488H01L23/562
Inventor 刘家宝
Owner 刘家宝
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com