Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Refresh circuit and memory

A circuit and counter technology, applied in static memory, digital memory information, information storage, etc., can solve the problem of wasting current, and achieve the effect of avoiding repeated refresh, reducing waste, and reducing waste of refresh current

Active Publication Date: 2022-04-26
CHANGXIN MEMORY TECH INC
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, under normal process corner or slow process corner conditions, all row addresses corresponding to a longer data retention time will be refreshed in advance, but the refresh command will be sent at a fixed time interval, and at this time it will start from row 0 Start refreshing, but during the data retention time, this part is redundant refreshing, wasting current

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Refresh circuit and memory
  • Refresh circuit and memory
  • Refresh circuit and memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, those skilled in the art can understand that in each embodiment of the present invention, many technical details are provided for readers to better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solutions claimed in this application can also be realized.

[0027] refer to figure 1 , the refresh circuit includes: a refresh control module 200, which is used to receive and execute a refresh command 100a to output a row address refresh signal 30a; it is also used to receive a process angle signal 10a to adjust the execution ratio of the refresh command 100a, and the process angle signal 10a represents The fast...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An embodiment of the present invention provides a refresh circuit and a memory. The refresh circuit includes: a refresh control module for receiving and executing a refresh command to output a row address refresh signal; and for receiving a process angle signal to adjust the refresh command Execution ratio, the faster the process angle represented by the process angle signal, the higher the adjusted execution ratio; the row addresser is used to receive the row address refresh signal and output the single row address to be refreshed; array refresh The device is used for performing a single-row refresh operation according to the single-row address, and outputting a single-row refresh end signal after the single-row refresh is completed. The embodiments of the present invention are beneficial to reduce refresh current consumption.

Description

technical field [0001] The embodiments of the present invention relate to the field of semiconductors, in particular to a refresh circuit and a memory. Background technique [0002] In order to save the data in the volatile memory, it is necessary to periodically refresh the volatile memory, and the refresh operation needs to complete the refreshing of all rows within the data retention time. The data retention time of the volatile memory is related to the type of chip process corner (Process Corner). The data retention time is shorter under the fast process corner condition, and the data retention time is longer under the slower process corner condition. [0003] The traditional technology will meet the standard of the fast process corner, and send refresh commands at corresponding time intervals according to the data retention time corresponding to the fast process corner, and refresh a fixed number of rows under each refresh command. Refresh all row addresses within. Th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/406G11C11/408
CPCG11C11/406G11C11/408
Inventor 谷银川刘格言
Owner CHANGXIN MEMORY TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products