Wavelength tunable semiconductor laser

Abstract

The invention discloses a semiconductor laser with adjustable wavelength. The semiconductor laser comprises an active region, a phase region, a grating region and a phase shift region manufactured in the grating region, wherein the phase region is composed of a second electrode, a second cladding, a first waveguide layer and a second substrate when being viewed from top to bottom; seen from top to bottom, the first grating region is composed of a third electrode, a third cladding, a first grating layer, a second waveguide layer and a third substrate; the phase shift region is composed of a fourth electrode, a fourth cladding, a third waveguide layer and a fourth substrate from top to bottom; the structure of the second grating area is completely consistent with that of the first grating area; a left end face of the laser is a cleavage surface, and output light of the laser is emitted from the cleavage surface; and a right end face of the grating area reduces reflection of the end face towards the interior of the laser through the antireflection film coating. According to the laser provided by the invention, high modulation bandwidth is realized by introducing a photon resonance effect, a wavelength tuning function can also be realized, and requirements of a next-generation optical communication system on a high-performance high-speed directly-modulated wavelength-adjustable device are met.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic devices, and more specifically relates to a distributed reflective semiconductor laser with adjustable wavelength and high-speed direct modulation. Background technique [0002] With the development of a series of information technologies such as smart applications, big data analysis, and cloud technology, our demand for data communication speed and capacity is increasing day by day. Institutions such as the Institute of Electrical and Electronics Engineers have also put forward requirements for light sources that can be applied to short-distance applications such as data centers. For example, in a 2-kilometer short-distance transmission link of 200GHz, it is necessary to use 4 modulation bandwidths of 40G to work in 4 Lasers of different wavelengths are used to form the light source. Therefore, in the access network, the highly demanded wavelength-tunable high-speed direct modulation semi...

AI Technical Summary

Problems solved by technology

This scheme uses a tilted grating to effectively reduce the signal transmission damage caused by chirp during the direct modulation of the laser, improve the channel capacity, and realize the tuning function at the same time. It is also a high-quality relatively high-speed wavelength tunable light source, but its modulation rate Nor did it meet the 40GHz or higher requirements mentioned above

[0006] To sum up, most of the directly modulated lasers currently on the market or in the research field have only one function of high bandwidth or wavelength tunability, and a few lasers can obtain a modulation bandwidth below 20 GHz when realizing the wavelength tuning function, but they still cannot Meet the needs of the next generation of high-speed tunable light sources

Images