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Alloy ultraviolet transparent conductive film and preparation method and application thereof

A technology of transparent conductive film and conductive film, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problem that ultraviolet light cannot pass through, achieve good practical application prospects, low production cost, and low cost of raw materials Inexpensive and easy to get effects

Inactive Publication Date: 2021-01-05
HUBEI UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Based on the above advantages, SnO 2 It has become a very common transparent conductive material, but SnO 2 It is only used in visible transparent conduction, because its band gap is 3.6eV, and ultraviolet light cannot pass through it.

Method used

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  • Alloy ultraviolet transparent conductive film and preparation method and application thereof
  • Alloy ultraviolet transparent conductive film and preparation method and application thereof
  • Alloy ultraviolet transparent conductive film and preparation method and application thereof

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Experimental program
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Embodiment 1

[0039] The invention provides an alloy ultraviolet transparent conductive film, which is Zr doped with A x sn 1-x o 2 n-type conductive thin film, wherein, A is Sb or Nb.

[0040] Specifically, in the embodiment of the present application, A is Nb, and x is 0, that is, the thin film in the embodiment of the present application is SnO doped with Nb 2 (Nb:SnO 2 ) n-type conductive film. Specifically, the thickness of the conductive film is 500nm.

[0041] Based on the same inventive concept, the present invention also provides the preparation method of the above-mentioned alloy ultraviolet transparent conductive film, such as figure 1 shown, including the following steps:

[0042] S1, providing a substrate;

[0043] S2, providing Zr doped with A x sn 1-x o 2 ceramic target;

[0044] S3, using Zr doped with A x sn 1-x o 2 Prepare a transparent conductive film on the surface of the substrate with a ceramic target;

[0045] Wherein, A is Sb or Nb.

[0046]It should ...

Embodiment 2

[0055] The invention provides an alloy ultraviolet transparent conductive film, which is Zr doped with A x sn 1-x o 2 n-type conductive thin film, wherein, A is Sb or Nb.

[0056] Specifically, in the embodiment of the present application, A is Nb, and x is 0.2, that is, the film in the embodiment of the present application is Zr doped with Nb 0.2 sn 0.8 o 2 (Nb:Zr 0.2 sn 0.8 o 2 ) n-type conductive film. Specifically, the thickness of the conductive film is 500nm.

[0057] It should be noted that SnO 2 The band gap is 3.6eV, ultraviolet light cannot pass through, and ZrO 2 The band gap is greater than 5.5eV, by adding SnO 2 with ZrO 2 Alloying to adjust the band gap so that it can meet the transmission of ultraviolet light. Undoped SnO 2 The conductivity of the film mainly depends on oxygen vacancies, and the concentration of oxygen vacancies is often difficult to control. Moreover, the larger the band gap of the semiconductor, the more difficult its intrinsic e...

Embodiment 3

[0072] The invention provides an alloy ultraviolet transparent conductive film, which is Zr doped with A x sn 1-x o 2 n-type conductive thin film, wherein, A is Sb or Nb.

[0073] Specifically, in the embodiment of the present application, A is Sb, and x is 0.1, that is, the film in the embodiment of the present application is Zr doped with Sb 0.1 sn 0.9 o 2 (Sb:Zr 0.1 sn 0.9 o 2 ) n-type conductive film. Specifically, the thickness of the conductive film is 400nm.

[0074] Based on the same inventive concept, the present invention also provides a method for preparing the above-mentioned alloy ultraviolet transparent conductive film, comprising the following steps:

[0075] S1, providing a substrate;

[0076] S2, providing Zr doped with A x sn 1-x o 2 ceramic target;

[0077] S3, using Zr doped with A x sn 1-x o 2 Prepare a transparent conductive film on the surface of the substrate with a ceramic target;

[0078] Wherein, A is Sb or Nb.

[0079] It should b...

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Abstract

The invention provides an alloy ultraviolet transparent conductive thin film and a preparation method and application thereof. The thin film is an A-doped ZrxSn1-xO2 n-type conductive thin film, and Ais Sb or Nb. According to the alloy ultraviolet transparent conductive thin film, Zr is doped into SnO2, so that the optical band gap of the alloy ultraviolet transparent conductive thin film is successfully increased, and a donor impurity A is doped into SnO2, so that the conductivity of the alloy ultraviolet transparent conductive thin film is successfully improved; the prepared conductive filmhas good permeability to deep ultraviolet and visible light; the conductive film is of a single-phase (100) oriented rutile structure and has good thermal stability, the ultraviolet and visible transmittance exceeds 90%, and the conductivity is good; and the preparation method of the alloy ultraviolet transparent conductive film provided by the invention has the advantages of simple required equipment and operation process, cheap and accessible raw materials, low production cost and favorable practical application prospects, and satisfies the conditions of large-scale industrial production.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to an alloy ultraviolet transparent conductive film and a preparation method and application thereof. Background technique [0002] Transparent conductive films are widely used in daily life, such as flat panel displays, transparent thin film transistors, solar cells and so on. However, most of these transparent conductive films are only transparent to visible light, which limits the application of transparent conductive films in the ultraviolet field, such as transparent electrodes of ultraviolet lasers, top electrodes of deep ultraviolet photodetectors, etc. Therefore, the preparation of ultraviolet transparent conductive films with adjustable band gap will have some application prospects in the field of ultraviolet transparent conduction. [0003] Tin dioxide (SnO 2 ) is a direct wide bandgap semiconductor with a bandgap of 3.6eV, SnO 2 It has a tetragonal ruti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/28C23C14/08
CPCC23C14/28C23C14/08
Inventor 黎明锴何云斌叶盼付旺刘伯涵魏浩然肖兴林尹魏玲卢寅梅常钢
Owner HUBEI UNIV
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