Preparation method of LED epitaxial wafer distributed Bragg reflector

Abstract

The invention discloses a preparation method of an LED epitaxial wafer distributed Bragg reflector, and the method comprises the steps: enabling quartz to rotate around the central axis of the quartzat a first angle in a first direction, enabling an electron beam to sweep a quartz ring fan-shaped region corresponding to the first rotating angle, and carrying out the preprocessing of the fan-shaped region; rotating the quartz around the central axis of the quartz at a first angle in a second direction opposite to the first direction to enable the electron beam to sweep over the fan-shaped region again so as to grow a first DBR layer with a first refractive index on the back surface of the LED epitaxial wafer; and growing a second DBR layer with a second refractive index on the first DBR layer. Impurities on the surface of the quartz ring are removed through pretreatment, and it is ensured that the first DBR layer formed after growth is high in adhesion to the LED epitaxial wafer and not prone to falling off. The evaporation capacity of the quartz ring in the pretreatment process can be accurately controlled by adjusting the rotating speed and time of the quartz ring, so that the quartz ring is prevented from generating excessive waste.

Description

technical field [0001] The invention relates to an LED chip manufacturing process, in particular to a method for preparing a distributed Bragg reflector of an LED epitaxial wafer. Background technique [0002] LED (Light-Emitting Diode) is the abbreviation of light-emitting diode, which is a commonly used light-emitting device, which releases energy and emits light through the recombination of electrons and holes. As a new type of energy-saving and environmentally friendly solid-state lighting source, LED has the advantages of high energy efficiency, small size, light weight, fast response and long life, making it widely used in many fields. [0003] The back of the LED epitaxial wafer has a Distributed Bragg Reflector (Distributed Bragg Reflection, generally referred to as DBR), which has a periodically stacked superlattice layer, and a periodic structure composed of two materials with different refractive indices arranged alternately in an ABAB manner. . Silicon oxide is...

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Problems solved by technology

However, if there are impurities on the quartz ring, the bonding force between the grown first DBR layer and the LED epitaxial wafer will be poor, and at the same time, the refractive index of the first DBR layer will not meet the requirements due to the presence of impurities.

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