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A method and apparatus for controlling programming performance

A performance and programming data technology, applied in the storage field, can solve problems such as temperature rise, programming effective current reduction, and inability to complete programming tasks, so as to achieve the effect of improving programming performance

Active Publication Date: 2022-08-09
GIGADEVICE SEMICON (BEIJING) INC +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The method and device for controlling programming performance provided by the present invention solve the problem that the temperature rises, the programming effective current decreases, the time for a single programming pressurization operation is fixed, and the programming pressurization time required to complete the entire programming operation will be longer , or even the problem of not being able to complete the programming task in the end

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  • A method and apparatus for controlling programming performance
  • A method and apparatus for controlling programming performance
  • A method and apparatus for controlling programming performance

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Embodiment Construction

[0066] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0067] figure 2 A flowchart of a method for controlling programming performance according to an embodiment of the present invention is shown. The method is applied to a NOR flash memory. The NOR flash memory includes a temperature sensor, a programming operation state machine, a clock frequency generator and a programming memory unit. The programming operation state machine includes a counter, the temperature sensor is connected to the cloc...

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Abstract

The present invention provides a method and apparatus for controlling programming performance. The method is applied to a NOR flash memory, the NOR flash memory includes: a temperature sensor, a clock frequency generator, a programming operation state machine and a programming storage unit, the programming operation state machine includes: a counter, and the method includes: a programming operation state machine Receive the programming operation instruction and the data to be programmed, and perform the programming verification and the programming press operation according to the programming operation instruction and the data to be programmed. The programming press operation includes: receiving the working temperature of the NOR flash memory sent by the temperature sensor, and adjusting the operating temperature according to the working temperature. time, according to the adjusted time to complete the programmed pressurization operation. In the present invention, when the programming pressing operation is performed, the programming operation state machine adjusts the time of a single programming pressing operation according to the working temperature of the NOR flash memory, completes the programming pressing operation, and controls the cycle period of the programming verification operation and the programming pressing operation. , to improve the programming performance of NOR flash memory.

Description

technical field [0001] The present invention relates to the field of storage, and in particular, to a method and device for controlling programming performance. Background technique [0002] At present, NOR flash memory uses channel carrier hot electron injection to realize programming operation. The research results show that when the temperature increases, the hot electron activity increases, and the generated effective current for programming will decrease, and the required amount of programming required to complete the programming will be reduced. The time will be longer. [0003] refer to figure 1 , shows a schematic diagram of the programming principle of the existing NOR flash memory. The programming operation is to inject hot electrons accelerated by a high electric field into the floating gate layer by hot electron injection, thereby changing the threshold of the floating gate layer to achieve the effect of programming. In order to form a conductive channel Road, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10G11C16/30G11C16/34
CPCG11C16/10G11C16/30G11C16/3481Y02D10/00
Inventor 刘言言许梦付永庆
Owner GIGADEVICE SEMICON (BEIJING) INC
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