Aluminum silicon carbide material and preparation method thereof

Abstract

The invention relates to an aluminum silicon carbide material which comprises aluminum and a silicon carbide prefabricated part. The aluminum silicon carbide material is characterized in that the silicon carbide prefabricated part is prepared from the following raw materials in parts by weight: 100 parts of silicon carbide particles, 1 to 10 parts of metal nitrate and 1 to 10 parts of a binding agent. The raw materials of the aluminum silicon carbide material contain metal nitrate, the metal nitrate can be thermally decomposed to generate corresponding metal oxide, connection between silicon carbide particles is enhanced, the strength of a silicon carbide prefabricated part is improved, and large-scale mass production is facilitated; and metal oxide generated by pyrolysis is attached to the surfaces of the silicon carbide particles so that oxidation of part of the silicon carbide particles can be effectively inhibited, generation of silicon dioxide is reduced, and the thermal conductivity of the aluminum-silicon carbide material is improved.

Description

technical field [0001] The invention specifically relates to an aluminum silicon carbide material and a preparation method thereof. Background technique [0002] Aluminum silicon carbide (AlSiC) is the abbreviation of aluminum-based silicon carbide particle-reinforced composite materials. Aluminum silicon carbide has outstanding advantages such as cheap raw materials, high thermal conductivity, and adjustable thermal expansion coefficient. It has been more and more widely used in the field of electronic packaging. application. [0003] CN105924178A discloses raw materials for the preparation of aluminum silicon carbide materials, including coarse silicon carbide particles and fine silicon carbide particles, and an aqueous aluminum dihydrogen phosphate solution of 1 to 3% of the total mass of the two silicon carbide particles and 5% of water, thereby preparing Aluminum silicon carbide material. However, the silicon carbide preforms prepared in this way have the defects of l...

AI Technical Summary

Problems solved by technology

However, the silicon carbide preforms prepared in this way have the defects of low strength and low thermal conductivity of aluminum silicon carbide materials, which are difficult to meet the heat dissipation requirements of electronic packaging materials and are not conducive to large-scale mass production.