Multi-channel temperature control device used for semiconductor coating equipment

Abstract

The invention discloses a multi-channel temperature control device used for semiconductor coating equipment, and belongs to the field of temperature control. According to the multi-channel temperaturecontrol device used for the semiconductor coating equipment, through the arrangement of a temperature control laminated channel layer and a selective heat conducting rod, when the temperature needs to be increased, heat conducting gas runs from bottom to top, an air blowing layer is attached to a fixed multi-channel plate, at the moment, part of the holes in the air blowing layer are blocked, theheat conduction gas enters the upper part of the temperature control device, the speed of the heat conduction gas to make contact with a semiconductor is decreased, and therefore the overall temperature rising speed of the temperature control device can be effectively controlled, the phenomenon that a film fails due to too high temperature rising of the semiconductor is avoided, and the success rate of semiconductor coating is effectively increased; and when the temperature needs to be decreased, the heat conduction gas moves downwards, so that the air blowing layer is bulged downwards untilthe air blowing layer is punctured by the selective heat conducting rod, and the heat conduction gas is directly contacted with the selective heat conducting rod to transfer heat downwards, so that the cooling speed is remarkably increased, the cooling time is shortened, and the semiconductor coating efficiency in the same time is effectively improved.

Description

technical field [0001] The invention relates to the field of temperature control, in particular to a multi-channel temperature control device for semiconductor coating equipment. Background technique [0002] Semiconductor equipment often needs to heat the wafer and the chamber or maintain the temperature required for the deposition reaction during the deposition reaction, so the heating plate must have a heating structure to meet the purpose of preheating the wafer. In order to solve the problem that the temperature of the heating plate rises too fast and cools down slowly during the process, the temperature of the heating plate is controlled by the cooling temperature control system to ensure that the temperature of the heating plate is stable during the process. In order to better control the temperature of the semiconductor, we need to transfer the temperature of the semiconductor to the heating plate, and control the temperature of the surface of the semiconductor by co...

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Problems solved by technology

[0003] For semiconductor thin film deposition equipment, plasma will participate in the deposition reaction during the deposition process. Due to the release of plasma energy and the energy release of the reaction between chemical gases, the temperature of the heating plate and wafer will increase with the increase of radio frequency and process time. It will continue to rise; if the process is carried out at the same temperature, it is necessary to wait for the heating plate to drop to the same temperature before proceeding, which will consume a lot of time and the production capacity of the equipment is relatively low

If the temperature of the wafer and heating plate is raised too fast, the temperature of the wafer and heating plate will exceed the temperature that the film needs to withstand, causing the film to fail

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