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Preparation method of low-temperature polycrystalline silicon array substrate, array substrate and display panel

A low-temperature polysilicon, array substrate technology, applied in semiconductor/solid-state device manufacturing, data processing input/output process, instruments, etc., can solve the problems of inability to precisely control CD, high production cost, and too many masks

Active Publication Date: 2020-09-01
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present application provides a method for preparing a low-temperature polysilicon array substrate that saves photomasks, so as to solve the technical problems in the prior art that the number of photomasks is too large, the production cost is high, the production cycle is long, and CD cannot be accurately controlled.

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  • Preparation method of low-temperature polycrystalline silicon array substrate, array substrate and display panel
  • Preparation method of low-temperature polycrystalline silicon array substrate, array substrate and display panel
  • Preparation method of low-temperature polycrystalline silicon array substrate, array substrate and display panel

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Embodiment Construction

[0073] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0074] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation indicated by rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc. The positional relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the a...

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Abstract

The invention discloses a preparation method of a low-temperature polycrystalline silicon array substrate, the array substrate and a display panel. An LS layer is reduced, a dielectric layer, apassivation layer and apixel electrode layer are simultaneously patternedby using a halftone photomask, a light resistor with a non-transparent area, a semi-transparent area, a full-transparent area and a full-transparent area is formed on the pixel electrode layer, the full-transparent area of 0.5 micron is arranged between the non-transparent area and the semi-transparent area, and the full-transparentarea is an area with the transmittance of 75%-90% and used for increasing the taper of the light resistor.

Description

technical field [0001] The present application relates to the field of display panel manufacturing, in particular to a method for preparing a low-temperature polysilicon array substrate that saves photomasks, an array substrate prepared by the method, and a display panel including the array substrate. Background technique [0002] Thin Film Transistor (Thin Film Transistor, TFT) Liquid Crystal Display (Liquid Crystal Display, LCD) has the advantages of low power consumption, high contrast, space saving, etc., and has become the most mainstream display device in the market. Compared with traditional amorphous silicon (A-Si) technology, low temperature polysilicon (Low Temperature Poly-silicon, LTPS) technology has higher carrier mobility, and is widely used in small and medium-sized high-resolution TFT-LCD and Active matrix organic light emitting diode (Active Matrix Organic Light Emitting Diode, AMOLED) panel production, but the number of photomasks required for the correspo...

Claims

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Application Information

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IPC IPC(8): H01L21/77H01L27/12G06F3/041G06F3/044
CPCH01L27/1259H01L27/1288H01L27/1214G06F3/0412G06F3/0445G06F2203/04103
Inventor 罗成志
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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