Preparation method of Ag2S-Sb2S3 co-sensitized ZnO-based photo-anode

An ag2s-sb2s3, co-sensitization technology, applied in electrical components, nanotechnology, circuits, etc., to achieve the effect of a wide range of applications and a simple and controllable preparation method

Inactive Publication Date: 2020-08-28
CIVIL AVIATION UNIV OF CHINA
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Problems solved by technology

[0004] At present, Ag is loaded on the surface of ZnO nanostructures based on the continuous ionic layer adsorption reaction method. 2 S and Sb 2 S 3 , thus assembling Ag 2 S-Sb 2 S 3 The co-sensitized ZnO-based photoanode has not been reported yet, but based on a simple method to achieve a significant broadening of the photoresponse range and a large increase in the absorption intensity of the photoanode, it has very important research and practical significance in the field of optoelectronic functional materials.

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  • Preparation method of Ag2S-Sb2S3 co-sensitized ZnO-based photo-anode

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Embodiment 1

[0012] The Ag provided in this example 2 S-Sb 2 S 3 The preparation method of the co-sensitized ZnO-based photoanode is to first generate ZnO nanorod arrays on the surface of ITO conductive glass, and then based on the continuous ion layer adsorption reaction method, the above-mentioned ITO glass with ZnO nanorods generated in 0.1M Na 2 React in S aqueous solution at 30°C for 10min, then wash in deionized water for 30s and blow dry with nitrogen; after that, in 0.05M AgNO 3 React in aqueous solution at 30°C for 5min, then wash in deionized water for 30s and blow dry with nitrogen; then in 0.1M Na 2 React in S aqueous solution at 30°C for 10min, then wash in deionized water for 30s and blow dry with nitrogen; then in 0.067M SbCl 3 React in ethanol solution at 30°C for 20min, then wash in ethanol for 30s and blow dry with nitrogen; repeat the above reaction process 5 times and dry in a blast drying oven at 60°C for 30min; finally make it on the surface of ITO conductive glass...

Embodiment 2

[0014] The Ag provided in this example 2 S-Sb 2 S 3 The preparation method of the co-sensitized ZnO-based photoanode is to first generate ZnO nanowire arrays on the surface of ITO conductive glass, and then based on the continuous ion layer adsorption reaction method, the above-mentioned ITO glass with ZnO nanowires generated in 0.05M Na 2 React in S aqueous solution at 30°C for 10min, then wash in deionized water for 30s and blow dry with nitrogen; then in 0.025M AgNO 3 React in an aqueous solution at 30°C for 5 min, then wash in deionized water for 30 s and blow dry with nitrogen; then in 0.05M Na 2 React in S aqueous solution at 30°C for 10min, then wash in deionized water for 30s and blow dry with nitrogen; then in 0.033M SbCl 3 React in ethanol solution at 30°C for 20min, then wash in ethanol for 30s and blow dry with nitrogen; repeat the above reaction process 5 times and dry in a blast drying oven at 60°C for 30min; finally make it on the surface of ITO conductive gl...

Embodiment 3

[0016] The Ag provided in this example 2 S-Sb 2 S 3 The preparation method of the co-sensitized ZnO-based photoanode is to first generate ZnO nanosheet arrays on the surface of ITO conductive glass, and then based on the continuous ion layer adsorption reaction method, the above-mentioned ITO glass with ZnO nanosheets generated in 0.05M Na 2 React in S aqueous solution at 30°C for 10min, then wash in deionized water for 30s and blow dry with nitrogen; then in 0.025M AgNO 3 React in an aqueous solution at 30°C for 5 min, then wash in deionized water for 30 s and blow dry with nitrogen; then in 0.05M Na 2 React in S aqueous solution at 30°C for 10min, then wash in deionized water for 30s and blow dry with nitrogen; then in 0.033M SbCl 3 React in ethanol solution at 30°C for 20min, then wash in ethanol for 30s and blow dry with nitrogen; repeat the above reaction process 10 times and dry in a blast drying oven at 60°C for 30min; finally make it on the surface of ITO conductive...

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Abstract

The invention discloses a preparation method of an Ag2S-Sb2S3 co-sensitized ZnO-based photo-anode. The method comprises the steps of firstly, generating a ZnO nano structure on ITO conductive glass; then based on a continuous ion layer adsorption reaction method, respectively reacting the glass with the ZnO nano-structure in a Na2S aqueous solution, an AgNO3 aqueous solution, a Na2S aqueous solution and a SbCl3 ethanol solution (the glass is cleaned and blow-dried with nitrogen after each step of reaction, and then the next step is carried out); and repeating the process for several times, anddrying in a blast drying oven to finally prepare a layer of Ag2S-Sb2S3 co-sensitized ZnO-based photo-anode on the surface of the ITO conductive glass. The Ag2S-Sb2S3 co-sensitized ZnO-based photo-anode prepared on the basis of the method is wide in photo-response range, high in light absorption intensity and high in carrier extraction and transmission rate, the preparation method is simple and easy to control, and the method can be popularized to preparation of other various sulfide co-sensitized photo-anodes.

Description

technical field [0001] The invention belongs to the technical field of preparation of photoelectric functional materials, in particular to an Ag 2 S-Sb 2 S 3 Preparation method of co-sensitized ZnO-based photoanodes. Background technique [0002] The use of traditional fossil energy is often accompanied by environmental and resource stock problems, and the development and application of new clean energy is becoming more and more urgent. The effective use of solar energy has extraordinary significance for the solution of energy problems, including converting solar energy into chemical energy or electrical energy. In solar cells or photoelectrocatalytic devices, photoanodes are very important components, and high-quality photoanodes are the key to obtaining high-performance devices. The more common inorganic metal oxide semiconductors are the most common materials in photoanodes, such as ZnO, TiO 2 , SnO 2 Wait. ZnO has been widely used as a photoanode material for sola...

Claims

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Application Information

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IPC IPC(8): H01L31/0224B82Y40/00
CPCH01L31/022475H01L31/022483H01L31/022466B82Y40/00
Inventor 韩建华刘志锋宋庆功严慧羽康建海郭艳蕊
Owner CIVIL AVIATION UNIV OF CHINA
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