Gas distributor in semiconductor device and semiconductor device

Abstract

The invention provides a gas distributor in a semiconductor device. The gas distributor comprises a distributor body. A gas distribution pipeline, a first gas inlet pipeline and a plurality of first gas output pipelines are arranged in the distributor body. The first gas inlet pipeline communicates with an gas inlet of the gas distribution pipeline, and the first gas outlet pipelines communicate with a plurality of gas outlets of the gas distribution pipeline in a one-to-one correspondence mode; a gas distribution cavity, a second gas inlet pipeline and a plurality of second gas outlet pipelines are further arranged in the distributor body, the gas distribution cavity is located above the gas distribution pipeline and is arranged around the first gas inlet pipeline, the height of the gas distribution cavity gradually decreases from the middle to the edge, the second gas inlet pipeline communicates with an gas inlet of the gas distribution cavity, the second gas outlet pipelines communicate with a plurality of gas outlets of the gas distribution cavity in a one-to-one correspondence mode. The first gas outlet pipelines and the second gas outlet pipelines are alternately arranged andextend to the gas outlet end surface of the distributor body. The invention further provides the semiconductor device. The uniformity of thin film deposition can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gas distributor in semiconductor equipment and the semiconductor equipment. Background technique [0002] Atomic layer deposition technology is a thin film preparation technology that is adsorbed layer by layer on the substrate in the form of a single atomic layer. The atomic layer deposition technology mainly includes two reaction processes: the first reaction process is: the first reaction precursor enters the reaction The chamber is fully adsorbed on the substrate, and after reaching saturation, the remaining reaction precursors and by-products are removed by the purge gas; the second reaction process is: the second reaction precursor enters the reaction chamber and is mixed with the already The groups adsorbed on the surface of the substrate react to release reaction by-products; after saturated adsorption is formed, the remaining reaction precursors and their by-pro...

AI Technical Summary

Problems solved by technology

Among them, for NH 3 , O 2 , Ar and N 2 and other reaction sources, can realize rapid transmission and purging; however, for more viscous, easy to condense and difficult to purify 2 O, TMA, TiCl 4 , PDMAT, etc., are very easy to remain in the pipeline, so that chemical vapor deposition occurs around the gas outlet of the gas outlet pipeline to form a film, which in turn leads to the phenomenon that the deposited film on the substrate is thin in the middle and thick at the edge

image 3 is a schematic diagram of the thickness distribution of a thin film deposited based on an existing gas distributor, from image 3 It can be seen that the thickness uniformity of the film is poor

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