Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor package and method for manufacturing the same

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of chip performance electromagnetic interference, contamination of bonding pads, etc.

Inactive Publication Date: 2020-05-26
NAN YA TECH
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, when filling the underfill material, the underfill material may overflow and contaminate the pads located in the outer connection area, causing electrical connection problems
[0005] In addition, with the miniaturization of semiconductor devices, the chip performance inside the semiconductor device may be affected by electromagnetic interference from adjacent chips

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor package and method for manufacturing the same
  • Semiconductor package and method for manufacturing the same
  • Semiconductor package and method for manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0067] The following description of the disclosure, accompanied by the accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the disclosure to which the disclosure, however, is not limited. In addition, the following embodiments can be properly integrated to complete another embodiment.

[0068] "An embodiment," "an embodiment," "an exemplary embodiment," "another embodiment," "another embodiment" and the like mean that the embodiments described in the present disclosure may include a particular feature, structure, or characteristic, however Not every embodiment must include the particular feature, structure or characteristic. Also, repeated use of the phrase "in an embodiment" does not necessarily refer to the same embodiment, but could be.

[0069] The terms used herein are only used to describe specific embodiments, and are not used to limit the concept of the present invention. As used herein, the singular ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present disclosure relates to a semiconductor package and a method for manufacturing the same. The semiconductor package includes a first substrate, a blocking dam, and a first contact pad. The first substrate includes a chip-mounting region and an outer connecting region outside the chip-mounting region. The blocking dam is disposed over the first substrate, wherein the blocking dam is disposed between the chip-mounting region and the outer connecting region, the blocking dam surrounds the chip-mounting region and includes a metal layer, and the blocking dam is of a wave shape as seen ina top view of the blocking dam. A first contact pad is disposed over the first substrate, and the first contact pad is within the outer connecting region.

Description

technical field [0001] This disclosure claims priority and benefit from U.S. Provisional Application No. 62 / 769,929, filed 11 / 20 / 2018, and U.S. Published Application No. 16 / 215,130, filed 12 / 10 / 2018, the U.S. Provisional Application and the U.S. The content of the formal application is incorporated herein by reference in its entirety. Background technique [0002] Semiconductor devices are essential to many modern devices. With the advancement of technology, semiconductor devices have increasingly powerful functions and include more and more integrated circuits, while the semiconductor devices are gradually becoming smaller. With the miniaturization of semiconductor devices, 3D chip (3DIC) structures are widely used in packaging structures, such as Package-on-Package (POP) structures and the like. [0003] The 3DIC structure may include substrates stacked on each other, and semiconductor chips are packaged between the two substrates to achieve a smaller package structure. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/16H01L23/24H01L23/544H01L23/552H01L21/50
CPCH01L21/50H01L23/16H01L23/24H01L23/544H01L23/552H01L2223/54426H01L21/563H01L24/13H01L24/16H01L24/32H01L24/73H01L24/81H01L24/92H01L2224/0401H01L2224/131H01L2224/16227H01L2224/26175H01L2224/32225H01L2224/73204H01L2224/73253H01L2224/8114H01L2224/81192H01L2224/92125H01L2924/3025H01L2924/014H01L2924/00014H01L2224/16225H01L2924/00H01L23/3114H01L23/488H01L24/09H01L24/17
Inventor 陈德荫
Owner NAN YA TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com