Lanthanum oxide-based RRAM and preparation method thereof

A technology of oxides and oxide layers, applied in the direction of electrical components, etc., can solve the problems of low-cost industrialization requirements, limited equipment, high production costs, etc., to achieve large-scale industrial applications, good resistance change effect, and equipment and the effect of less investment in raw materials

Pending Publication Date: 2020-02-21
XIAN JIAOTONG LIVERPOOL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above method is limited by equipment and high production cost, which cannot meet the needs of low-cost industrialization

Method used

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  • Lanthanum oxide-based RRAM and preparation method thereof
  • Lanthanum oxide-based RRAM and preparation method thereof
  • Lanthanum oxide-based RRAM and preparation method thereof

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Embodiment Construction

[0035] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in combination with specific embodiments and with reference to the accompanying drawings. It should be understood that these descriptions are exemplary only, and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present invention.

[0036] A transparent RRAM based on lanthanum oxide, comprising a substrate, a resistive oxide layer and an upper electrode layer stacked sequentially from bottom to top;

[0037] The substrate includes a transparent glass layer and a lower electrode layer; the resistive oxide layer is La 2 o 3 The thin film layer; the upper electrode layer includes several upper electrodes arrayed on the resistive oxide layer, and the u...

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Abstract

The invention discloses an Lanthanum oxide-based RRAM that comprises a substrate, a resistive oxidation layer and an upper electrode layer which are sequentially stacked from bottom to top, wherein the substrate comprises a transparent glass layer and a lower electrode layer; the resistive oxidation layer is a La2O3 thin film layer; the upper electrode layer comprises a plurality of upper electrodes arrayed on the resistive oxidation layer, and metal protective layers are arranged on the surfaces, away from the resistive oxidation layer, of the upper electrodes. The resistive oxide layer is manufactured by adopting a solution process, the preparation of the low-cost RRAM is realized, and the obtained RRAM has a good resistive effect and less equipment and raw material investment, can be used for preparing a large-area RRAM device, and realizes large-scale industrial application.

Description

technical field [0001] The invention relates to the technical field of resistive random access memory, in particular to a transparent RRAM based on lanthanum oxide and a preparation method thereof. Background technique [0002] Resistive Random Access Memory (RRAM, Resistive Random Access Memory) is a new generation of non-volatile memory with its high computing speed, high density storage capacity, low cost, low power consumption, high endurance and other characteristics in the next generation The fields of large-scale electronic and optoelectronic circuits and neuromorphic computing hold great application potential. In recent years, transparent electronic devices such as touch screens, wearable displays, solar panels, and sensors have broad application prospects in the fields of national defense, aerospace, consumer electronics, and transportation. Therefore, high-transparency RRAM devices with excellent device characteristics have attracted extensive attention. [0003]...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/20H10N70/883H10N70/021
Inventor 沈棕杰赵春赵策洲杨莉黄彦博温嘉铖
Owner XIAN JIAOTONG LIVERPOOL UNIV
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