Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memristor-based Rikitake hyperchaotic system simulation circuit

A system simulation and memristor technology, applied in the design field of chaotic signal generation device, can solve the problems of less comprehensive application research and difficult design, etc., and achieve the effect of simple circuit structure

Inactive Publication Date: 2020-02-11
QILU INST OF TECH
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, there are many studies on memristor and Rikitake chaotic system, but there are few studies on the comprehensive application of these two theories
The present invention introduces the secondary nonlinear magneto-controlled memristor into the deformed Rikitake chaotic system to solve the problems of realizing the Rikitake hyper-chaotic system based on the memristor and the difficulty of design due to its complexity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memristor-based Rikitake hyperchaotic system simulation circuit
  • Memristor-based Rikitake hyperchaotic system simulation circuit
  • Memristor-based Rikitake hyperchaotic system simulation circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0027] refer to figure 1 , a memristor-based Rikitake hyperchaotic system analog circuit, consisting of a memristor circuit and three channel circuits, the output signal of the memristor model circuit is used as an input signal to connect to the input terminal of the first channel U1A; the first The output signal of the channel is fed back to the input terminal of the first channel U1A, and connected to the input terminal of the second channel U1C as an input signal, and connected to an input pin of the multiplier A2 in the second channel, and simultaneously connected to the multiplier of the third channel An input pin of A3 is connected; the output of the second channel is connected to the input end of the memristor circuit U2C as an input signal, and is connected with an input pin of the multiplier A1 of the first channel, and the output signal of t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a memristor-based Rikitake hyperchaotic system simulation circuit which comprises a memristor circuit and three channels, wherein an output signal of the memristor circuit is connected with the input end of the first channel, and the output signal of the memristor circuit is used as one path of input to be connected with the input end of the first channel U1A; the output ofthe first channel is connected with the input end of the second channel U1C; the output of the second channel is connected to the input end of the memristor circuit U2C, and the previous stage of anoutput signal of the second channel is connected with one input pin of a multiplier A3 in the third channel; and the output of the third channel is connected to an input pin of a multiplier A2 of thesecond channel, and the previous stage of an output signal of the third channel is connected to one input end of a multiplier A1 of the first channel. The circuit is simple in structure and easy to implement, circuit parameters can be adjusted to generate chaotic and hyperchaotic phenomena and other phenomena, and the circuit has important application values in the field of research of the Rikitake generator oscillation effect caused by the memory effect and control of the oscillation effect.

Description

technical field [0001] The invention relates to a Rikitake hyperchaotic system analog circuit based on a memristor, belonging to the technical field of chaotic signal generation device design. Background technique [0002] In 1971, Professor Cai Shaotang predicted the existence of a memristor that could describe the relationship between charge and magnetic flux based on the completeness principle of the basic variable combination of the circuit. In 2008, Hewlett-Packard Labs successfully produced nanometer-scale memristors based on metals and metal oxides, which aroused great interest in the scientific and technological circles, and research on the application of memristors has become a hot spot in current scientific research. [0003] In 1958, the Japanese geomagnetist Rikitake first proposed the double-disk generator model, which became the first model to explain the frequent random reversal of the geomagnetic field, thus solving the most difficult problems that need to be...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G09B23/18
CPCG09B23/183
Inventor 王艳玲雷腾飞
Owner QILU INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products