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Tantalum ring and preparation method thereof, sputtering device comprising tantalum ring and application thereof

A sputtering device and tantalum ring technology, which is applied in the field of semiconductor manufacturing, can solve the problems of less sputtering sources and small attachment areas, etc., and achieve the effects of improving service life, avoiding tip discharge, and high bonding strength

Inactive Publication Date: 2020-01-10
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with conventional sandblasting, the knurling operation can obtain higher roughness on the surface of the convex body, enhance the ability of the surface of the convex body to absorb particles, and avoid the phenomenon of particle peeling, but its attachment area is smaller, Resulting in fewer sputter sources attached

Method used

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  • Tantalum ring and preparation method thereof, sputtering device comprising tantalum ring and application thereof
  • Tantalum ring and preparation method thereof, sputtering device comprising tantalum ring and application thereof
  • Tantalum ring and preparation method thereof, sputtering device comprising tantalum ring and application thereof

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Embodiment Construction

[0050] The technical solutions of the present invention will be further described below through specific embodiments. It should be clear to those skilled in the art that the embodiments are only for helping to understand the present invention, and should not be regarded as specific limitations on the present invention.

[0051] This embodiment is to provide a tantalum ring, such as figure 1 As shown, it includes a ring and the patterns arranged on the ring, wherein the ring includes a ring body 1 and a boss 2 located on the outer peripheral surface of the ring, wherein the ring body includes two circular end faces 1 facing away from each other in the axial direction -1 and an outer peripheral surface 1-2 and an inner peripheral surface 1-3 arranged between the two annular end faces 1-1 and diametrically opposite, the outer peripheral surface 1-2 and the inner peripheral surface 1-3 1 is perpendicular to the two circular end faces 1-1.

[0052] In this embodiment, the shape o...

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Abstract

The invention provides a tantalum ring and a preparation method thereof, a sputtering device comprising the tantalum ring and an application thereof. The tantalum ring comprises a ring part and patterns arranged on the surface of the ring part, and the patterns are in a conical pit shape, the conical pit-shaped patterns have a large specific surface area, when the conical pit-shaped patterns are applied to a sputtering process, a large amount of sputtering source can be attached on the conical pit-shaped patterns, and a better adhesion force is provided; in addition, the patterns present a conical pit shape, the tops of the conical pits face the interior of the ring part, the bottoms of every two adjacent conical pits are connected, a plane-shaped structure is presented but not a structurewith a pointed end, therefore, the phenomenon of point discharge occurring in a power-on process can be avoided, so that the service life of the tantalum ring is prolonged. The preparation method ofthe tantalum ring is simple, only the knurling treatment is needed, surface sharpening treatment is not needed, and it is ensured that on the premise that the obtained tantalum ring has better adsorption power and adsorption capacity on the sputtering source, and the situation of the point discharge is avoided as well.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and relates to a tantalum ring, a preparation method, a sputtering device including a tantalum ring and an application thereof. Background technique [0002] Currently, sputtering is generally used to form electrode films on the surface of semiconductor structures. Sputtering is a physical vapor deposition (PVD) coating method. It bombards the target with charged particles, causing the surface atoms of the target to collide and transfer energy and momentum. The target atoms escape from the surface and deposit process on the substrate. Metal, alloy or dielectric films can be formed on the substrate surface by sputtering process. [0003] Since the direction of the charged particles bombarding the target is uncertain, the directionality of the target atoms escaping from the target surface is poor, that is, the target atoms will leave the target surface from various angles, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34B23P9/02
CPCB23P9/02C23C14/34
Inventor 姚力军潘杰蒋云霞王学泽邵科科汪涛
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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