Lip seal with improved byproduct deposition problem and semiconductor processing device containing same

Abstract

The present invention relates to a semiconductor processing device having a lip seal with an improved byproduct deposition problem, which comprises: a support unit formed to be ring-shaped, and havinga hollow portion at an internal side thereof; an elastic unit extending from an upper surface of the support unit; a contact unit extending from one end of the elastic unit, and having a flat area onan upper surface thereof; and a sliding unit extending from one end of the contact unit. Moreover, an upper surface of the sliding unit is formed to be round-shaped.

Description

technical field [0001] The invention relates to a lip seal which improves the problem of vapor deposition of by-products and a semiconductor engineering device comprising the lip seal. Background technique [0002] Tong Semiconductor Processing Equipment is a device that places substrates on chucks and processes substrates through semiconductor processing. [0003] For example, an apparatus for processing a substrate by semiconductor processing may be an apparatus that performs one or more of etching, vapor deposition, and ashing with plasma, or a device that performs vapor deposition with a metal gas. [0004] The substrate may refer to a wafer or a tray on which a wafer is mounted. [0005] In such a semiconductor process apparatus, since a semiconductor process is performed in a chamber in a vacuum state, an inert gas as a heat transfer gas is supplied from a chuck to a substrate for heat regulation of the substrate. [0006] At this time, a lip seal is interposed betwe...

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Problems solved by technology

[0009] Due to this by-product of vapor deposition on the lip seal, there is a problem of incomplete contact when the substrate is in contact with the lip seal

[0010] Furthermore, the amount of leakage of heat transfer gas to the parts where the substrate and the lip seal are not in complete contact increases

[0011] The increase in the leakage of the heat transfer gas will cause a temperature difference between the part where the leakage of the heat transfer gas increases and the part where the leakage of the heat transfer gas does not increase, and this temperature difference will eventually cause the uniformity of the substrate process to decrease. question

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