Perovskite solar cell with sandwich structure electron transport layer and preparation method thereof

Abstract

The invention relates to a perovskite solar cell with a sandwich structure electron transport layer and a preparation method thereof. The structure of the solar cell device comprises as follows from bottom to top: transparent conductive glass FTO as an anode, an ultrathin stannic oxide (SnO2) film as a sandwich structure electron transport layer and deposited on the FTO layer, an ultrathin carbonquantum dot CQDs film, an SnO2 film, a perovskite layer, a 2, 2 ', 7, 7'-tetra[N, N-bis(4-methoxyphenyl)amino]-9, 9'-spirobifluorene Spiro-OMeTAD layer as a hole transport layer, and a silver film asa cathode arranged on the hole transport layer through vacuum thermal evaporation. According to the invention, good energy level matching is achieved, the transmittance of the electron transmission layer is increased, the absorption of the perovskite layer is enhanced, the recombination of heterojunction interface carriers is reduced, and the electron transmission efficiency is improved, so that the photoelectric conversion efficiency of the perovskite solar cell is obviously improved, the preparation process is simple and controllable, and the cost is low.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a perovskite solar cell with a sandwich structure composed of carbon quantum dots as an electron transport layer and a preparation method thereof. Background technique [0002] With the increasingly prominent energy and environmental issues, solar power generation, as the backbone of the new energy industry, has received a lot of attention. Among them, the development of solar cells is crucial to the entire photovoltaic industry. New perovskite solar cells have been a research hotspot in recent years. Perovskite solar cells have been improved and developed from sensitized solar cells, and have significant advantages such as cleaner, easier to apply, low manufacturing cost and high efficiency. [0003] At present, the highest certified photoelectric conversion efficiency has exceeded 24.2%, but it is still far from the theoretical calculation efficiency. People ge...

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Problems solved by technology

[0004] However, the single-layer electron transport layer often cannot sufficiently guarantee to block the recombination of holes in the process of effectively transporting electrons.

If the thickness of the electron transport layer is increased, it will cause high series resistance, but when the thickness of the electron transport layer is reduced, it is easy to generate leakage

Due to the limitations of these factors, the single-layer electron transport layer may not be able to sufficiently block the recombination of electrons and holes, which will adversely affect the performance of the device.

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