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Image sensor device and manufacturing method thereof

A technology for image sensors and sensor chips, applied in radiation control devices, electric solid devices, semiconductor devices, etc., can solve the problems of reduced yield and unfavorable yield, and achieve the effects of preventing peeling, improving production efficiency, and avoiding stress problems

Inactive Publication Date: 2019-12-24
上海剧浪影视传媒有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the above method achieves the improvement of integration, it needs to be carried out successively in the process and cannot be parallelized. Such a sequence leads to a decrease in its yield, and in this sequence, the overall test can only be carried out at the end, and its yield rate is unfavorable

Method used

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  • Image sensor device and manufacturing method thereof
  • Image sensor device and manufacturing method thereof
  • Image sensor device and manufacturing method thereof

Examples

Experimental program
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Effect test

no. 1 example

[0062] see figure 1 , the image sensor device of this embodiment is obtained by bonding a first bonding portion and a second bonding portion, wherein, the first bonding portion, the first bonding portion includes a semiconductor substrate 1, a spacer 4 and cover glass5. The semiconductor substrate 1 is a traditional silicon material, which is cut from a semiconductor wafer, and has pads 3 and sensor chip regions 2 on its upper surface, and the pads 3 are connected to the sensor chip region 2 .

[0063] The cover glass 5 is adhered on the upper surface of the semiconductor substrate 1 through the spacer 4 . Wherein, the cover glass can be a glass plate with a filter layer; the semiconductor substrate 1 is provided with a first through hole 6, and the lower surface of the semiconductor substrate 1 and the lower surface of the first through hole 6 The surfaces are coplanar and constitute a first bonding plane.

[0064] The manufacturing method of the first bonding part can be ...

no. 2 example

[0069] see Figure 4 , the image sensor device of this embodiment is obtained by bonding the first bonding part and the second bonding part, and its structure is basically similar to that of the first embodiment (the same reference numerals are omitted). Corresponding to the first bond, however, this exemplary embodiment additionally has a polymer layer 12 on the underside of the semiconductor substrate 1 into which the first via 6 extends. 12, the lower surface of the polymer layer 12 is coplanar with the lower surface of the first through hole 6 and constitutes a first bonding surface. The polymer layer 12 is made of the same material as the encapsulation resin layer 10 , such as epoxy resin, silicone resin, etc., so as to ensure the reliability of bonding and prevent peeling.

[0070] For the manufacturing method of the first bonding part of this embodiment, please refer to Figure 5 , which includes: (1) see Figure 5 (A), providing a semiconductor substrate 1 with a pl...

no. 3 example

[0074] see Figure 7 , the image sensor device of this embodiment is obtained by bonding the first bonding part and the second bonding part, and its structure is basically similar to that of the first embodiment (the same reference numerals are omitted). But corresponding to the second bond, this embodiment additionally has a redistribution layer 13 on the upper surface of the encapsulation resin layer 10, the topmost layer of the redistribution layer 13 includes a dielectric layer 14 and embedding the dielectric layer 14 The bump 15, wherein the upper surface of the dielectric layer 14 is coplanar with the upper surface of the bump 15 and constitutes a second bonding surface. The dielectric layer 14 is an inorganic insulating layer, such as silicon oxide or silicon nitride, which can ensure the reliability of the bonding between the dielectric layer 14 and the semiconductor substrate 1 (such as a silicon substrate) and prevent peeling.

[0075] For the manufacturing method o...

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Abstract

The invention provides an image sensor device and a manufacturing method thereof. According to the image sensor device, a first bonding part and a second bonding part are respectively manufactured, and finally the thermal compression bonding is carried out, so the production efficiency can be improved, and the problem of stress among multiple layers caused by multiple integration steps and the unreliability caused by multi-layer stacking deposition in the prior art can be avoided. Moreover, in order to improve the bonding reliability, a same bonding material is used as much as possible on a bonding surface for bonding, and peeling is prevented.

Description

technical field [0001] The invention relates to the field of packaging, testing and manufacturing of semiconductor chips, in particular to an image sensor device and a manufacturing method thereof. Background technique [0002] Image sensors are the core components of camera modules, and CMOS image sensors and charge-coupled devices are currently two mainstream image sensors. Among them, the charge-coupled device is integrated on the single crystal silicon material, and the pixel signal is moved row by row and column by row and amplified accordingly at the edge exit position. The CMOS image sensor is integrated on the metal oxide semiconductor material, and each pixel has a Signal amplifier, pixel signal can be directly scanned and exported. CMOS has the advantages of low cost, simple design, small size, and low power consumption. With the maturity and progress of technology, CCD has been gradually replaced by CMOS image sensor. [0003] For existing CMOS image sensors, t...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14601H01L27/14632H01L27/14634H01L27/14636H01L27/14643H01L27/1469
Inventor 侯红伟
Owner 上海剧浪影视传媒有限公司
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