Terahertz wave amplifier based on high electron mobility transistor

Abstract

The invention discloses a terahertz wave amplifier based on a high electron mobility transistor. The terahertz wave amplifier comprises an electron emitter, an electron collector and two high-electron-mobility transistors, the electron emitter is used for emitting electron beams; the electron collector is used for collecting electron beams emitted by the emitter, the two high-electron-mobility transistors are used for forming an electromagnetic wave radiation channel, the electron beams pass through the electromagnetic wave radiation channel, and electrons deliver carried energy to terahertz waves according to an injection wave interaction principle, so that amplification of terahertz wave signals is achieved. Based on the high-electron-mobility transistor with the periodic metal gate structure, the terahertz wave amplifier is simple in structure, convenient to process, compact and room-temperature.

Description

technical field [0001] The invention belongs to the technical field of terahertz wave amplifiers, and more specifically relates to a terahertz wave amplifier based on high electron mobility transistors. Background technique [0002] Terahertz waves have important application value, and research on terahertz radiation sources has become a hot spot in terahertz science and technology research at home and abroad. However, the size co-transition effect of traditional vacuum electronic devices is obvious in the process of developing to high frequency and high power. As the frequency increases, the size of the device is required to become smaller and smaller, the processing becomes more difficult or even impossible, and the power density is difficult to further increase. Therefore, the current research on terahertz vacuum electronic devices is mainly concentrated in the low-frequency terahertz domain, and it is urgent to find new mechanisms and processes. [0003] In contrast, t...

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Problems solved by technology

Studies by Dyakonov and Shur et al. have shown that there are two-dimensional electron gas channels on the heterojunction interface of III–V semiconductor-based high electron mobility transistors (HEMTs), which can excite plasmons at terahertz frequencies. Bulk wave, when the terahertz wave drifts with the two-dimensional electron gas, the high electron mobility transistor structure biased in the direct current will cause the amplification and saturation of the terahertz plasma wave, but the generated plasma wave in the terahertz frequency band very low power

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