Wafer support pedestal with adjustable radio frequency assembly

Abstract

The invention provides a wafer support pedestal, which comprises a disk body, wherein the disk body is provided with a bearing surface, a first lower electrode and a second lower electrode, wherein the bearing surface is used for bearing a wafer, the first lower electrode and the second lower electrode are positioned below the bearing surface, the first lower electrode and the second lower electrode are mutually independent in structure, and the first lower electrode is positioned above the second lower electrode.

Description

technical field [0001] The present invention relates to wafer supports for the manufacture of semiconductor structures, in particular wafer supports suitable for plasma processing, generally equipped with partial components of radio frequency circuits. Background technique [0002] Plasma processing is used in the manufacture of technologies such as integrated circuits, photomasks, plasma displays and solar energy. In the manufacture of integrated circuits, wafers are processed by plasma chambers, such as etching, chemical vapor deposition PECVD or physical vapor deposition PEPVD. For smaller integrated circuits, the control of processing parameters needs to be more precise, such as plasma energy spectrum, plasma energy radial distribution, plasma density and plasma density radial distribution. Especially the plasma density, which determines the deposition rate and etch rate of the wafer surface. The radial distribution of plasma density and the radial distribution of plas...

AI Technical Summary

Problems solved by technology

However, known configurations still do not easily achieve these precise controls, and even limit the degrees of freedom for plasma tuning.

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