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Solid state capacitor impregnation method

A capacitor, solid-state technology, applied in the field of solid-state capacitor impregnation, can solve the problems of incomplete impregnation of the element center, long impregnation time, and insufficient impregnation.

Active Publication Date: 2019-10-22
ZHAOQING BERYL ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The impregnation time of the existing process is long; on the other hand, the impregnation is not sufficient, resulting in the center of the element not being impregnated thoroughly

Method used

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  • Solid state capacitor impregnation method

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Embodiment 1

[0028] A method for impregnating solid capacitors, comprising the steps of:

[0029] 1. Before the solid capacitor is impregnated, the preparation work is as follows:

[0030] The guide pin 11 of the capacitor faces upward, and the anode guide pin 11 is spot-welded on the carrier strip 20. The consistency of the welding height must be ensured to fix multiple elements 10 on the same plane to facilitate the impregnation operation. The carrier bar 20 can be an iron bar.

[0031] Second, impregnation:

[0032] Perform the first cycle of impregnation:

[0033] (1) The tray 30 rises to suspend the elements 10, dry vacuuming to make the vacuum degree negative pressure, and the dry vacuuming time is 5-10s;

[0034] (2) Lower the tray 30 to lower the element 10 and immerse it in the impregnating solution. The impregnation depth of the element 10 is 1 / 2~2 / 3 of the height of the core package of the element 10; continue vacuuming so that the vacuum degree P1 is -30Kpa, and the holding ...

Embodiment 2

[0053] Different from Embodiment 1, in this embodiment:

[0054] During the first cycle of impregnation, the vacuum degree P1 is -40Kpa when the element is impregnated;

[0055] During the second cycle of impregnation, the vacuum degree P2 is -60Kpa when the element is impregnated;

[0056] When the third cycle of impregnation is carried out, the vacuum degree P3 is -80Kpa when the element is impregnated;

[0057] When vacuuming after impregnation, the vacuum degree P4 is -100Kpa.

Embodiment 3

[0059] Different from Embodiment 1, in this embodiment, the impregnation only includes two cycles.

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Abstract

The invention discloses a solid state capacitor impregnation method, which comprises the following steps: (1) an element is suspended, dry vacuum pumping for 5 to 10 s is carried out, and a vacuum degree is made to be negative pressure; (2) the element is lowered and is immersed in an impregnation liquid, the pressure is held for 5 to 20 s, the vacuum degree is negative pressure, and the vacuum degree is equal to that in the first step; (3) the element is kept in the impregnation liquid and is deflated to a normal pressure state; (4) the above steps (1) to (3) is a cycle, the cycle is executedfor at least two times, and in the case of multiple cycles, the vacuum degree of vacuum impregnation is gradually increased; and (5) the element is suspended, dry vacuum pumping is carried out, the vacuum degree is negative pressure, and the vacuum degree is greater than any above vacuum degree. The solid state capacitor disclosed in the invention has the advantages that the impregnation time isreduced, the impregnation effects are improved, and the element center can be impregnated thoroughly.

Description

technical field [0001] The invention relates to the technical field of capacitor manufacturing, in particular to a solid capacitor impregnation method. Background technique [0002] The manufacturing method of solid capacitors generally includes cutting, nailing, impregnation, assembly, casing, aging, and characteristic testing. Among them, the existing impregnation method for solid capacitors, such as the one published in the application number 201810420475.4, named a high-voltage solid electrolytic capacitor impregnation method, when impregnating a solid capacitor, it is necessary to impregnate the core package with an impregnation solution for 10- 120 minutes. The impregnation time of the existing technology is long; on the other hand, the impregnation is insufficient, resulting in the impregnation of the center of the element is not thorough. Contents of the invention [0003] In order to make up for the defects of the prior art, the invention provides a solid capaci...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/15H01G13/04
CPCH01G9/15H01G13/04
Inventor 邹建明刘泳澎
Owner ZHAOQING BERYL ELECTRONICS TECH
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