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A kind of monocrystalline silicon texturing additive and its application of adding graphene oxide quantum dots

A graphene quantum dot, silicon texturing technology, applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of hindering the contact between the etchant and the silicon surface, reducing the texturing efficiency, etc., so as to improve the photoelectric conversion. efficiency, improve texturing efficiency, and eliminate the effect of uneven light and dark

Active Publication Date: 2021-04-16
江苏先进无机材料研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In Patent 1 (China Application No. 201810051182.3), Zhang et al. added graphene oxide to the texturing agent to regulate the reflectivity of the crystalline silicon textured surface. The size of graphene attached to the surface of the silicon wafer hinders the contact between the etchant and the silicon surface, thereby reducing the texturing efficiency, and the reflectivity of the prepared silicon wafer textured surface is above 26%.

Method used

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  • A kind of monocrystalline silicon texturing additive and its application of adding graphene oxide quantum dots
  • A kind of monocrystalline silicon texturing additive and its application of adding graphene oxide quantum dots
  • A kind of monocrystalline silicon texturing additive and its application of adding graphene oxide quantum dots

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Disperse 1g of graphene oxide (2-100μm in size) in 10g of concentrated nitric acid, ultrasonically peel off the graphene oxide for 5 hours to form a brown dispersion liquid; heat the obtained brown dispersion liquid to 60°C and keep it for 5 hours; in the above solution Adding concentration is the NaOH solution adjustment pH value of 2M to neutrality; Gained liquid uses high-speed centrifuge separation process 7000rpm, 4min, obtains the upper layer brown solution containing graphene oxide quantum dot ( image 3 : graphene oxide quantum dot size is 2nm, oxygen content is 45at% (see figure 2 ); Graphene oxide quantum dot content is 0.5wt% in the solution);

[0044] The graphene oxide quantum solution, PEG400, NaOH, and water are configured according to the weight ratio of 6:4:0.8:89.2 to obtain the texturing additive;

[0045] Configure a NaOH aqueous solution with a concentration of 1.2wt%, and add the above texturing additives to the NaOH aqueous solution according to...

Embodiment 2

[0049] 0.5 g of graphene oxide (size 2-100 μm) was dispersed in 3 g of concentrated nitric acid, and the graphene oxide was fully peeled off by ultrasonication for 8 hours to form a brown dispersion liquid. Heat the brown dispersion liquid to 90°C and keep it for 2h; add K at a concentration of 0.5M to the above solution 2 CO 3 The pH of the solution was adjusted to neutral. Gained liquid uses high-speed centrifuge separation process 9000rpm, 2min, obtains the upper layer brown solution containing graphene oxide quantum dot (the size of graphene oxide quantum dot is 5nm, and oxygen content is at 65% (see figure 1 ); Graphene oxide quantum content is 0.3wt% in the solution);

[0050] The graphene oxide quantum solution, P123 solution, Na 2 CO 3 , and water are configured according to the weight ratio of 10:1:1:88 to obtain the texturing additive;

[0051] Then configure 2% NaOH texturing solution (NaOH aqueous solution), and add the above texturing additives into the NaOH ...

Embodiment 3

[0055] 0.3g of glucose was dissolved in 50ml of deionized water, and subjected to hydrothermal treatment at 120°C for 800min to obtain a graphene oxide quantum dot solution (see Figure 6 , the size of the graphene oxide quantum dot is 3nm, and the oxygen content is at 38% (atomic ratio); the graphene oxide quantum dot content is 1.3wt% in the solution;

[0056] The graphene oxide quantum solution, PVA, Na 2 CO 3 , NaOH and water are configured according to the weight ratio of 5:2:2:2:89 to obtain the texture additive;

[0057] Then configure 4% NaOH texturing solution, and add the above texturing additives into the NaOH texturing solution according to 3% by weight to form an alkaline texturing solution;

[0058] At 90°C, put the monocrystalline silicon wafer into the above alkaline texturing solution for etching for 450s;

[0059] After texturing, the obtained monocrystalline silicon wafers were washed with water and dried. The test results show that the size of the pyram...

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Abstract

The invention relates to a monocrystalline silicon texturing additive added with graphene oxide quantum dots and its application. The composition of the monocrystalline silicon texturizing additive added with graphene oxide quantum dots includes: graphene oxide quantum dot solution 0.01-15wt %, surfactant 1~10wt%, alkali metal hydroxide or / and carbonate 0.05~3wt%, the balance is deionized water; the content of the graphene oxide quantum dot in the described graphene oxide quantum dot solution 0.02-1wt%; the size of the graphene oxide quantum dot is 2-10nm, and the oxygen content is 25-65at%.

Description

technical field [0001] The invention relates to a surfactant monocrystalline silicon texturing additive containing graphene oxide and a process technology for preparing an alkaline texturing liquid by using the texturing additive and preparing a monocrystalline silicon surface textured surface with low reflectivity, belonging to silicon Based solar cell optoelectronic technology field. Background technique [0002] Energy is an eternal topic of current social development. People use the photovoltaic effect to manufacture solar cells for photoelectric conversion. Compared with other power generation systems, solar cells have significant advantages: absolutely pollution-free; safe and pollution-free; not subject to geographical restrictions on resource distribution; and high portability. Therefore, solar cells are favored by countries all over the world. Among them, because of its high efficiency and low cost, crystalline silicon solar cells account for more than 81% of the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/10C30B29/06
CPCC30B29/06C30B33/10
Inventor 王家成鞠强健马月云王巍
Owner 江苏先进无机材料研究院
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