High-frequency signal transmission/reception device

A technology for receiving equipment and high-frequency signals, applied in electromagnetic transceivers, optical radiation measurement, parallel plate/lens feeding arrays, etc., can solve problems such as high loss, a large number of photoconductive pixels, and high cost, and achieve low loss and low control Power, low cost effect

Active Publication Date: 2019-09-17
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] 1) high losses encountered when using standard semiconductor technology, resulting in low energy efficiency;
[0005] 2) Off-the-shelf components and circuits with low parasitic characteristics are complex or large and have high cost
[0013] The disadvantage of this solution is that a large number of photoconductive pixels are required for the device to provide acceptable scanning characteristics

Method used

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  • High-frequency signal transmission/reception device
  • High-frequency signal transmission/reception device
  • High-frequency signal transmission/reception device

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Embodiment Construction

[0058] discussed below Figure 1 to Figure 18 The various embodiments used to describe the principles of the disclosure in this patent document are by way of illustration only and should not be construed in any way to limit the scope of the disclosure. Those skilled in the art will understand that the principles of the present disclosure may be implemented in any suitably arranged system or device.

[0059] figure 1 a and 1b show the working principle of the light guiding element. As mentioned above, the present disclosure is based on switching between two states of a photoconductive element: a dielectric state with low intrinsic conductivity (off state) and a conductive state with relatively high conductivity under the action of light (connected state). status). Such as figure 1 As shown in a, in the off state, the structure of the photoconductive element is stable and non-conductive; the photoconductive element (PE) usually has capacitive properties and is transparent to...

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Abstract

The present disclosure relates to radio engineering, and more specifically to high-frequency (HF) signal transmission / reception devices based on photoconductive switching elements. An HF signal transmission / reception device comprises a signal electrode with matching elements disposed along an edge thereof; a ground electrode, a dielectric layer between the signal electrode and the ground electrode, photoconductive elements (PE) each electrically connected to the signal electrode and the ground electrode and arranged in a grid, an excitation signal feed point, and load elements electrically connected to the matching elements. The photoconductive elements each have a switched-off state in the absence of a control light flux and a switched-on state in the presence of a control light flux, The switched-on photoconductive elements form a reflection profile of the signal supplied from the excitation signal feed point. The distance between adjacent photoconductive elements is less than half the wavelength of the excitation signal.

Description

technical field [0001] Various exemplary embodiments of the present disclosure relate to a photoconductive element (PE) based high frequency signal transmitting / receiving device. Background technique [0002] The ever-increasing demands of users have stimulated the rapid development of mobile communication technology. Currently, 5G mmWave (millimeter wave) networks are being actively developed. 5G mmWave networks may require higher performance due to user experience requirements, including factors such as ease of connection with nearby devices and improved energy efficiency. mmWave technology encounters various fundamental challenges associated with the physics of antenna arrays, the construction of high-speed transceivers, and more. [0003] The fundamental challenges and limitations affecting current radio frequency (RF) signal transmitting / receiving devices (switches, phase shifters, antennas) operating at frequencies above 5 GHz are as follows: [0004] 1) high losses...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01Q3/26G02B6/10
CPCG02B6/107G02B6/12002H01Q3/20H01Q3/24H01Q3/44H01Q9/30H01Q15/147H01Q19/138H01Q21/20H01Q25/00H01Q3/46H01Q15/04H01Q21/0031H01P1/15H01Q3/2676G02B6/10G01J1/04H01Q5/22H04B10/40H04Q11/0005H04Q2011/0035
Inventor M.N.马库林A.R.维伦斯基
Owner SAMSUNG ELECTRONICS CO LTD
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