A protection device for a vacuum measuring tool of an ion beam etching system

Abstract

The invention discloses a protection device for a vacuum measurement tool of an ion beam etching system. The ion beam etching system includes a reaction chamber and a vacuum measurement tool for measuring the internal vacuum of the reaction chamber. The reaction chamber The body wall is provided with a ventilation interface, and the vacuum measuring tool is connected to the ventilation interface; the protection device includes a metal particle adsorption block plugged in the ventilation interface, and also includes a metal particle adsorption block arranged between the outer wall and the ventilation interface. A clasp; a number of ventilation holes are opened on the clasp. The invention prevents solid particles and ion beams from entering the vacuum measurement tool through the ventilation interface through the metal particle adsorption block and the snap ring; the snap ring is provided with a number of vent holes to ensure the ventilation of the vacuum measurement tool and the reaction chamber. At the same time, the metal particle adsorption block made of strong magnet can absorb metal particles, ensuring that the metal particles will not pass through the vent holes. The invention is installed and fixed by the flange, which is convenient for disassembly, cleaning and maintenance.

Description

technical field [0001] The invention belongs to the technical field of semiconductor etching, in particular to a protection device for a vacuum measuring tool of an ion beam etching system. Background technique [0002] In the manufacturing process of semiconductor devices, the etching process is the most frequently used and appeared among many processes. [0003] As the key structure of the chip shifts from planar to 3D structure (for example: FinFET structure in logic devices), advanced memory structures (for example: magnetic memory (MRAM) and resistive variable memory (ReRAM), these device structures require the accuracy of the etching process , repeatability and process quality requirements are getting higher and higher; at the same time, in the manufacturing process of MRAM devices, there are many special metal materials and metal compound materials that need to use the etching process; in addition, the etching process generated during the plasma etching process Most ...

AI Technical Summary

Problems solved by technology

The position of the vacuum measurement device is generally within the divergence angle of the ion beam, so the ion beam emission will enter the vacuum measurement device during the etching process, destroying the measurement circuit, resulting in damage to the vacuum gauge and other damages that cannot be used, increasing the frequency of replacement and cost consumption too high

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