Protection device of vacuum measurement tool of ion beam etching system

Abstract

The invention discloses a protection device of a vacuum measurement tool of an ion beam etching system. The ion beam etching system comprises a reaction cavity and a vacuum measurement tool for measuring the internal vacuum degree of the reaction cavity, the wall of the reaction cavity is provided with a ventilation interface, and the vacuum measurement tool is connected to the ventilation interface; the protection device comprises a metal particle adsorption block plugged in the ventilation interface and a snap ring arranged between the outer wall of the metal particle adsorption block and the ventilation interface; and a plurality of air vents are formed in the snap ring. According to the invention, through the metal particle adsorption block and the snap ring, solid particles and ion beams are prevented from entering a vacuum measuring tool through the ventilation interface; and the plurality of air vents are arranged on the snap ring to ensure that the vacuum measuring tool and thereaction cavity are ventilated. Meanwhile, the metal particle adsorption block made of the strong magnet material can absorb the metal particles, so that the metal particles are prevented from passing through the air vents. The protection device of a vacuum measurement tool of an ion beam etching system is installed and fixed through the flange and is convenient to dismount and mount, clean and maintain.

Description

technical field [0001] The invention belongs to the technical field of semiconductor etching, in particular to a protection device for a vacuum measuring tool of an ion beam etching system. Background technique [0002] In the manufacturing process of semiconductor devices, the etching process is the most frequently used and appeared among many processes. [0003] As the key structure of the chip shifts from planar to 3D structure (for example: FinFET structure in logic devices), advanced memory structures (for example: magnetic memory (MRAM) and resistive variable memory (ReRAM), these device structures require the accuracy of the etching process , repeatability and process quality requirements are getting higher and higher; at the same time, in the manufacturing process of MRAM devices, there are many special metal materials and metal compound materials that need to use the etching process; in addition, the etching process generated during the plasma etching process Most ...

AI Technical Summary

Problems solved by technology

The position of the vacuum measurement device is generally within the divergence angle of the ion beam, so the ion beam emission will enter the vacuum measurement device during the etching process, destroying the measurement circuit, resulting in damage to the vacuum gauge and other damages that cannot be used, increasing the frequency of replacement and cost consumption too high

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