Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Resonant Thin Film Layers, Resonators and Filters

A thin film layer and resonator technology, applied in impedance networks, electrical components, etc., can solve the problems of a single resonator frequency and the inability to meet the needs of resonator operating frequency diversity, and achieve the effect of enriching diversity and enriching design methods.

Active Publication Date: 2020-10-02
XIAMEN SANAN INTEGRATED CIRCUIT
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the resonator with this structure has a relatively single frequency, which cannot meet people's needs for the diversity of resonator operating frequencies.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resonant Thin Film Layers, Resonators and Filters
  • Resonant Thin Film Layers, Resonators and Filters
  • Resonant Thin Film Layers, Resonators and Filters

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application. In the description of the present application, the terms "first", "second", etc. are only used to distinguish descriptions, and cannot be understood as indicating or implying relative importance.

[0031] Please see Figure 1A , which is a schematic diagram of a filter 10 in an embodiment of the present application. The filter 10 in this embodiment includes: a plurality of first resonators, and a plurality of first resonators are connected in series at the input and output ends of the filter 10, such as Figure 1A Resonator Y1, resonator Y2 and resonator Y3 are shown as the first resonator.

[0032] A plurality of second resonators each connected between a node and a common terminal of the two first resonators. Figure 1A The resonator Y4 and the resonator Y5 shown are the second resonators, wherein ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided in the present application are a resonant thin film layer, a resonator and a filter; the resonant thin film layer comprises a first electrode layer disposed on a first wafer, a piezoelectric layer disposed on the first electrode layer, a second electrode layer disposed on the piezoelectric layer, an adjustable layer disposed on the second electrode layer, and a counterweight pattern which is implemented on the adjustable layer and disposed on the second electrode layer, and which is used for adjusting different weights of the counterweight pattern so as to adjust different working frequencies of the resonant thin film layer of a resonant thin film. The present application achieves the adjustment of the counterweight pattern of the resonant thin film layer according to needs, which thus enables different resonant thin film layers to have different working frequencies.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular, to a resonant film layer, a resonator and a filter. Background technique [0002] The basic principle of thin film bulk acoustic resonator is to use resonance technology to convert electrical energy into sound waves through the inverse piezoelectric effect of piezoelectric films to form resonance. This resonance technology can be used to make advanced components such as thin film frequency shaping devices. Thin film bulk acoustic resonator acoustic wave devices have the characteristics of small size, low cost, high quality factor, strong power bearing capacity, high frequency (up to 1-10GHz) and compatibility with IC technology. In wireless transceivers, functions such as image elimination, spurious filtering and channel selection are realized, so they are widely used in the field of wireless communication. [0003] The existing thin film bulk acoustic resonator s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03H3/02H03H9/02H03H9/13H03H9/17H03H9/54
CPCH03H3/02H03H9/02015H03H9/131H03H9/174H03H9/54H03H2003/023H03H2009/02173
Inventor 林志东谢祥政罗捷尚荣耀朱庆芳杨濬哲侯汉成
Owner XIAMEN SANAN INTEGRATED CIRCUIT
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com