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Solar cell inverter of MgZnO film transistor having circular structure and preparation method thereof

A technology of thin-film transistors and solar cells, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of high cost of photovoltaic cell power inverters, low attractiveness of BIPV applications, and affecting the wide application of BIPV. Achieve the effects of easy popularization and application, convenient control and operation, high temperature and electrical performance stability

Inactive Publication Date: 2019-08-30
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

BIPV is used as a building glass curtain wall or roof. In many cases, it needs to be transparent. Although the semi-transparent thin-film photovoltaic power generation system can basically be realized, the current photovoltaic inverter is still non-transparent, which will affect the wide application of BIPV.
Existing photovoltaic cell power inverters are costly and non-transparent, not attractive for BIPV applications, and poor in scalability

Method used

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  • Solar cell inverter of MgZnO film transistor having circular structure and preparation method thereof

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Embodiment 1

[0032] In this example, see figure 1 , a solar cell inverter with a circular MgZnO thin film transistor, its structure adopts the structural combination form of substrate-electrode-insulating layer-channel-electrode, which is sequentially composed of glass substrate-Cr electrode, SiO 2 The insulating layer, the MZO channel and the Au electrode are stacked and assembled to form a transparent thin film transistor. The substrate is made of transparent glass, and the MZO film is a transparent film. The solar cell inverter structure of the circular structure MgZnO thin film transistor adopts the structural combination of substrate-electrode-insulating layer-channel-source electrode and drain electrode, and combines ring-shaped metal gate electrode and channel layer on the glass substrate MZO film is used to form a ring-shaped film with a width of 15 μm on the corresponding position of the ring-shaped gate electrode, making it a ring-shaped channel of the thin film transistor. The r...

Embodiment 2

[0055] This embodiment is basically the same as Embodiment 1, especially in that:

[0056] In this embodiment, a solar cell inverter with circular structure MgZnO thin film transistor adopts the structural combination form of substrate-electrode-insulating layer-channel-electrode, which consists of glass substrate-Cr electrode, SiO 2 The insulating layer, the MZO channel and the Au electrode are stacked and assembled to form a transparent thin film transistor. The substrate is made of transparent glass, and the MZO film is a transparent film. The solar cell inverter structure of the circular structure MgZnO thin film transistor adopts the structural combination of substrate-electrode-insulating layer-channel-source electrode and drain electrode, and combines ring-shaped metal gate electrode and channel layer on the glass substrate MZO film is used to form a ring-shaped film with a width of 35 μm on the corresponding position of the ring-shaped gate electrode, making it a ring...

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Abstract

The invention discloses a solar cell inverter of a MgZnO film transistor having a circular structure and a preparation method thereof. The MgZnO film is prepared, the solar cell inverter structure isdesigned, and the inverter structure is a combination of electrode-insulating layer-channel layer-electrode structures and is formed by sequentially laminating and assembling by a Cr electrode, a SiO2substrate, an MZO channel and an Au electrode. Compared with a traditional inverter, the solar cell inverter has a high blocking voltage and a high pinch-off voltage, is safe and non-toxic and is suitable for use in solar power generation in daily life, the price is lower than that of an IGZO material, the solar cell inverter is suitable for use in large-scale solar cells, a substrate of the solar cell inverter adopts glass, an MZO film is a transparent film, and the solar cell inverter has a greater advantage in aesthetics than conventional solar cells.

Description

technical field [0001] The invention relates to a ZnO thin film transistor and a preparation method thereof, in particular to a high-voltage transparent magnesium (Mg) doped ZnO thin film transistor and a preparation method thereof, which are applied in the field of manufacturing technology of inorganic non-metallic material electronic devices. Background technique [0002] For decades, solar energy has been a leading technology in the quest to replace fossil fuel energy as a sustainable and clean source of energy. However, cost and efficiency remain major issues encountered with photovoltaic (PV) cells. A power inverter that converts direct current to alternating current is an essential part of a photovoltaic cell power generation system. At present, photovoltaic cell power inverters are mainly based on high-power silicon-based, gallium nitride-based insulated gate bipolar transistors (IGBTs) or metal-oxide semiconductor field-effect transistors (MESFETs). These power inv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/227H01L29/06H01L21/34
CPCH01L29/0657H01L29/227H01L29/66969H01L29/78603H01L29/7869
Inventor 黄健周新雨黄柘源胡艳尚艺马云诚别佳瑛唐可王林军
Owner SHANGHAI UNIV
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