Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor laser generation device

A laser generation and semiconductor technology, which is applied in the direction of semiconductor lasers, lasers, phonon exciters, etc., can solve the problem of insufficient measurement accuracy of sensors, and achieve the effect of improving accuracy

Inactive Publication Date: 2019-08-16
华科微磁(北京)光电技术有限公司
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is: in order to solve the problem that the laser light source in the existing sensor is affected by the interference magnetic field, resulting in insufficient measurement accuracy of the sensor, the present invention provides a semiconductor laser generator to solve the above problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor laser generation device
  • Semiconductor laser generation device
  • Semiconductor laser generation device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0025] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inner", "Outer", "Axial", "Radial", "Circumferential", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a semiconductor laser generation device, which comprises a laser, a temperature sensor, a heat sink, an electric heating plate, a temperature measurement unit and a temperaturecontrol unit. The heat sink is stacked between the laser and the electric heating plate, and the two opposite surfaces of the heat sink closely fit the laser and the electric heating plate respectively. The electric heating plate is electrically connected with the temperature control unit. The semiconductor laser generation device cancels a TEC temperature control module with strong magnetism. Thetemperature measurement unit uses a high-frequency AC signal to excite the temperature sensor to avoid the generation of a low-frequency AC induced magnetic field during temperature measurement. Thetemperature control unit uses a high-frequency AC signal to drive the electric heating plate to avoid the generation of a low-frequency AC induced magnetic field during temperature control. Thus, it is ensured that the laser source itself does not introduce magnetic field bias or magnetic field noise, the accuracy of the sensor is improved, and the requirement for the application of quantum sensors in fields sensitive to magnetic field is met.

Description

technical field [0001] The invention relates to the technical field of laser generation, in particular to a semiconductor laser generation device. Background technique [0002] With the rapid development of semiconductor laser technology, the performance of semiconductor lasers has been continuously improved, and they have been widely used in quantum sensing fields such as nuclear magnetic resonance gyroscopes and high-performance atomic magnetometers. [0003] In these specific fields, the sensor measures the measured parameters by building an internal stable magnetic field and detecting changes in the magnetic field. Therefore, other magnetic fields that have nothing to do with the measured parameters can also be sensitive to the sensor and become a measurement error source. As the light source is used inside the sensor, it is necessary to strictly control the residual magnetic field during the design and assembly process, so as to avoid the introduction of constant error ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01S5/024
CPCH01S5/024H01S5/02453
Inventor 陶桦
Owner 华科微磁(北京)光电技术有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products