Three-dimensional nonvolatile semiconductor memory based on nanocrystalline floating gate and its preparation method
A non-volatile, nanocrystalline technology, used in semiconductor devices, electrical solid devices, electrical components, etc., can solve the problems of long-term stable storage requirements, weak shrinkage characteristics of nanocrystalline metals, and limited space for improving storage capacity. Achieve good data retention characteristics, increase the number of stacked layers, and reduce the effect of charge leakage
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[0030] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.
[0031] Aiming at the defects of the prior art, the present invention provides a non-volatile three-dimensional semiconductor memory based on nanocrystalline floating gate, which includes a plurality of three-dimensional NAND memory strings in the vertical direction, and one memory cell can store at least 2 bits of data.
[0032] By changing the type of floating gate material and the correspon...
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