GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention discloses a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. A multi-quantum-well layer of the gallium nitride-based light-emitting diode epitaxial wafer comprises a plurality of quantum well layers and quantum barrier layers, wherein the quantum well layers and the quantum barrier layers are alternately grown, and each quantum well layer comprises a plurality of layers of InxGa1-xN quantum well sub-layers, wherein the In content in the plurality of layers of quantum well sub-layers is gradually increased and then gradually decreased layer by layer along the stacking direction of the epitaxial wafer; each quantum barrier layer comprises multiple layers of Si-doped ByGa1-yN quantum barrier sub-layers, wherein the B content in the plurality of layers of quantum barrier sub-layers is gradually increased and then gradually decreased layer by layer along the stacking direction of the epitaxial wafer; and x is greater than or equal to 0 and less than or equal to 1, and y is more than or equal to 0 and less than or equal to 1. According to the gallium nitride-based light-emitting diode epitaxial wafer provided by the invention, the distribution uniformity of electrons in the quantum wells can be improved, so that the radiation recombination rate of electrons and holes in the multi-quantum wells is improved, and the luminous efficiency of the LED is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlights, etc. [0003] The epitaxial wafer is the main component of the LED. The existing GaN-based LED epitaxial wafer includes a substrate, a low-temperature buffer layer, a three-dimensional nucleation layer, a two-dimensional recovery layer, and an undoped GaN layer stacked on the substrate in sequence. , an N-type layer, a multi-quantum well layer and a P-type layer, wherein the multi-quantum well layer includes alte...

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Problems solved by technology

[0005] Because the mobility of electrons is much faster than that of holes, the distribution of electrons in the existing multi-quantum well layer is very uneven, which will lead to a decrease in the radiative recombination rate of electrons and holes in the multi-quantum wells, thereby reducing the luminous efficiency of LEDs.

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