NVM reliability improving device and method

A technology of reliability and performance, applied in the field of reliability improvement of NVM and reliability improvement device of non-volatile memory, can solve the problem that the distinction between the on state and the off state cannot be realized, the storage unit can no longer be used, and the information cannot be used. problems with reading

Inactive Publication Date: 2019-06-11
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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AI Technical Summary

Problems solved by technology

If the gate dielectric layer of the memory cell is damaged, the read current or voltage in the on state and the read current or voltage in the off state will deviate from the normal situation. As the deviation increases, It will lead to the inability to distinguish between on-state and off-state in the end, so it is impossible to read the stored information, resulting in reliability problems; storage units with reliability problems will no longer be used

Method used

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  • NVM reliability improving device and method

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Embodiment Construction

[0034] Such as figure 1 As shown, it is a schematic structural diagram of a reliability improvement device for NVM in an embodiment of the present invention. The reliability improvement device for NVM in an embodiment of the present invention includes:

[0035] An intelligent high voltage control module 1, the intelligent high voltage control module 1 outputs a control signal to the charge pump 2 and controls the magnitude of the high voltage signal output by the charge pump 2.

[0036] The high-voltage operation of each storage unit 3 of the NVM includes erasing and writing, and the erasing voltage corresponding to the erasing and the programming voltage corresponding to the writing are provided by the high-voltage signal output by the charge pump 2 .

[0037]The operated information of each storage unit 3 of the NVM and the corresponding high-voltage signal information are input into the intelligent high-voltage control module 1 .

[0038] The reliability data of the stora...

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Abstract

The invention discloses a reliability improving device of an NVM. The system comprises an intelligent high-voltage control module which outputs a control signal to a charge pump and controls the magnitude of a high-voltage signal output by the charge pump, the high-voltage signal is provided for each storage unit of an NVM and realizes high-voltage operation on the storage units, and operated information and high-voltage signal information of the storage units are input into the intelligent high-voltage control module; Reliability data of the storage unit are formed on the reliability test platform. When high-voltage operation is carried out, the intelligent high-voltage control module provides a corresponding control signal to the charge pump according to the operated information and thehigh-voltage signal information corresponding to the storage unit and the requirements of the reliability data and provides a corresponding high-voltage signal to realize high-voltage operation. The invention further discloses a reliability improving method of the NVM. The reliability of the NVM can be improved, the service life of a chip of the NVM is prolonged, and the error rate is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a device for improving the reliability of a non-volatile memory (Non-Volatile Memory, NVM). The invention also relates to a reliability improvement method of NVM. Background technique [0002] The storage unit of NVM can store information and the stored information will be retained after power failure. The operation of the storage unit of NVM includes erasing, writing, that is, programming and reading, where erasing and writing require corresponding high-voltage signals, and the high voltage of the high-voltage signal means that the voltage of the read signal is higher than that of the read signal, and The high-voltage signal corresponding to erasing needs to be able to erase the charge stored in the gate of the NVM storage unit, such as electrons, and the corresponding high-voltage signal for writing requires that the stored charge such as electrons...

Claims

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Application Information

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IPC IPC(8): G11C16/30G11C5/14G06F3/06
Inventor 徐晓俊
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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