Substrate processing apparatus, substrate processing method and recording medium

Abstract

The invention provides a substrate processing apparatus, a substrate processing method and a recording medium. The substrate processing apparatus comprises at least one liquid film forming unit configured to form a liquid film of a drying prevention liquid on a surface of a substrate; at least one drying processing unit configured to dry the substrate with the formed liquid film; a transfer mechanism configured to take out the substrate on which the liquid film is formed from the liquid film forming unit and transfer the substrate into the drying processing unit. A thickness of the liquid filmon the surface of the substrate at a moment when a drying processing is begun in the drying processing unit is controlled to fall within a target range by performing a transfer time adjusting operation of adjusting a volatilization amount of a liquid forming the liquid film on the substrate during a transfer of the substrate by adjusting a transfer time during which the substrate is transferred from the at least one liquid film forming unit into the at least one drying processing unit with the transfer mechanism or by performing an initial liquid film thickness adjusting operation of adjusting the thickness of the liquid film formed on the substrate in the at least one liquid film forming unit.

Description

technical field [0001] The present invention relates to a thickness of a liquid film of a protective liquid that exists on a surface of a substrate when a substrate such as a semiconductor wafer is subjected to a drying treatment such as supercritical drying treatment and is carried into a drying treatment section for drying treatment. Techniques that are maintained within an appropriate range. Background technique [0002] In the manufacture of a semiconductor device, a substrate such as a semiconductor wafer is subjected to liquid treatment such as chemical cleaning or wet etching. With the miniaturization and higher aspect ratio of the pattern formed on the surface of the substrate, the collapse of the pattern is more likely to occur in the drying process for removing the liquid remaining on the surface of the substrate. In order to cope with this problem, in recent years, a treatment fluid using a supercritical state (for example, supercritical CO 2 ) drying method (fo...

AI Technical Summary

Problems solved by technology

The inventors of the present invention clearly found the following problem after using a substrate processing apparatus that houses a plurality of liquid processing units and a plurality of supercritical drying processing units: it is difficult to start supplying supercritical fluid to the substrate in the supercritical drying processing unit The thickness of the protective liquid film at the time point is maintained within an appropriate range

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