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Thin film transistor and its manufacturing method, device, chip and display device

A thin-film transistor and basic technology, applied in the manufacture of transistors, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of large source and drain spacing, large size of thin film transistors, and low precision, and achieve the effect of reducing size

Active Publication Date: 2021-01-15
BOE TECH GRP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the accuracy of the patterning process in the related art is low, so that the distance between the source and the drain is often large, resulting in a large size of the thin film transistor

Method used

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  • Thin film transistor and its manufacturing method, device, chip and display device
  • Thin film transistor and its manufacturing method, device, chip and display device
  • Thin film transistor and its manufacturing method, device, chip and display device

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Embodiment Construction

[0052] In order to make the purpose, technical solution and advantages of the present application clearer, the implementation manners of the present application will be further described in detail below in conjunction with the accompanying drawings.

[0053] Due to the low precision of the patterning process in the related art, the distance between the source and the drain is often large, resulting in a large size of the thin film transistor. Therefore, an embodiment of the present invention provides a thin film transistor, and the thin film transistor The source and drain layers can be manufactured by deposition. Due to the high precision of layer formation in the way of deposition, the distance between the source and the drain can be reduced, and the size of the thin film transistor can be reduced. The thin film transistor and its manufacturing method provided by the embodiments of the present invention will be explained below.

[0054] Exemplarily, figure 1 A schematic st...

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Abstract

The application discloses a thin film transistor, a manufacturing method thereof, a device, a chip and a display device, belonging to the technical field of semiconductors. The thin film transistor includes: a basic pad layer, a basic insulating layer, a source-drain layer and an active layer, the basic pad layer has a recess, the basic insulating layer has a first barrier wall and a second barrier wall with intervals, and the first barrier wall The orthographic projection area of ​​the interval area with the second retaining wall on the base cushion is located in the area where the depression is located, and the orthographic projection areas of the first retaining wall and the second retaining wall on the foundation cushion are both in the same area as the area where the depression is located. Overlapping; the source-drain layer includes: a source electrode located on the first barrier wall, and a drain electrode located on the second barrier wall. The present application solves the problem of the large size of the thin film transistor, and can reduce the size of the thin film transistor, and the present application is used in the manufacture of the thin film transistor.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to a thin film transistor and its manufacturing method, device, chip and display device. Background technique [0002] A thin film transistor is an essential semiconductor device in chips and display devices. The important components of the thin film transistor include: an active layer and a source-drain layer, and the source-drain layer includes a source electrode and a drain electrode with intervals. [0003] In the related art, when manufacturing the source and drain layers in a thin film transistor, usually an electrode material layer is formed first, and then the electrode material layer is patterned to obtain the source and drain layers. [0004] However, the precision of the patterning process in the related art is low, so that the distance between the source and the drain is often large, resulting in a large size of the thin film transistor. Contents of t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/423H01L21/336
CPCH01L29/423H01L29/78696H01L29/78603H01L29/41733H01L29/66742
Inventor 马啸尘袁广才宁策谷新胡合合
Owner BOE TECH GRP CO LTD
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