NAND Flash storage reliability optimization method based on a self-recovery effect
An optimization method and reliable technology, which is applied in the input/output process of data processing, instruments, electrical digital data processing, etc., can solve the problems of decreased insulation capacity of the tunnel oxide layer and reduced reliability of NAND Flash chips, etc., so as to improve the service life , small storage space and low computational complexity
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[0031] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0032] The embodiment of the present invention discloses a NAND Flash storage reliability optimization method based on the self-recovery effect, comprising the following steps:
[0033] Step 1: Prepare for data writing operation;
[0034] Step 2: traverse the information storage table and find the data block with the least number of P / E times;
[0035] Step 3: Determine whether the found data block with the least number of P / E times is unique;
[0036] Step ...
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