Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solid-state imaging device and method for manufacturing same

A camera device and solid-state image technology, applied in image communication, radiation control devices, electric solid-state devices, etc., can solve problems such as image quality deterioration, achieve the effects of improving sensitivity, ensuring area, and suppressing image quality degradation

Inactive Publication Date: 2019-04-02
高塔伙伴半导体有限公司
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, a signal that does not exist on the subject appears, and the image quality deteriorates significantly

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solid-state imaging device and method for manufacturing same
  • Solid-state imaging device and method for manufacturing same
  • Solid-state imaging device and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0025] figure 1 It is a cross-sectional view of the solid-state imaging device according to the first embodiment disclosed in this specification.

[0026] Such as figure 1 As shown, the solid-state imaging device of this embodiment has: a substrate 9, a plurality of pixels are arranged two-dimensionally on the upper surface side of the substrate 9; a first impurity region 3a of the first conductivity type is provided on the Inside the substrate 9; a light receiving portion (photodiode) 3b of the second conductivity type provided on each of the plurality of pixels and formed in the first impurity region 3a; an overflow drain region 22 of the second conductivity type , which is provided in the substrate 9 under the first impurity region 3a; and the second conductivity type second impurity region 2, which is connected to the overflow drain region 22 in the first impurity region 3a. In this embodiment, the above-mentioned first conductivity type is, for example, p-type, and the ...

no. 2 approach

[0058] Figure 5 It is a cross-sectional view showing the solid-state imaging device according to the second embodiment disclosed in this specification. exist Figure 5 In , the same components as those of the solid-state imaging device according to the first embodiment are denoted by the same reference numerals.

[0059] Such as Figure 5 As shown, the solid-state image pickup device of this embodiment is a solid-state image pickup device that is irradiated with incident light from the back side of the substrate 29 . The solid-state image pickup device of this embodiment includes: a substrate 29; a first conductive type first impurity region 3a provided in the substrate 29; a second conductive type light receiving portion 3b provided in a plurality of pixels. each pixel, and formed in the first impurity region 3a; the overflow drain region 22 of the second conductivity type, which is provided under the first impurity region 3a in the substrate 29; and the second impurity r...

no. 3 approach

[0074] Figure 6A is a cross-sectional view showing an SOI substrate 50 having a gettering layer 41, Figure 6B It is a cross-sectional view showing the solid-state imaging device according to the third embodiment including the SOI substrate 50 .

[0075] Such as Figure 6A , Figure 6B As shown, the solid-state imaging device of the present embodiment is different from the solid-state imaging device of the first embodiment in that the gettering layer 41 is provided in the silicon layer 1 c of the SOI substrate 50 . The configurations of the insulating film 5 , the gate electrode 6 a , the wire 6 c , the planarizing film 7 , and the like are the same as those of the solid-state image pickup device according to the first embodiment.

[0076] It should be noted that, in Figure 6B Among them, substrate 49 has SOI substrate 50 , first impurity region 3 a , light receiving portion 3 b , drain region 4 and overflow drain region 22 . The configurations of the first impurity reg...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
refractive indexaaaaaaaaaa
Login to View More

Abstract

This solid-state imaging device is provided with: a substrate 9; a first impurity region 3a of a first conductivity type, which is provided within the substrate 9; a light receiving part 3b of a second conductivity type, which is formed within the first impurity region; an overflow drain region 22 of the second conductivity type, which is provided below the first impurity region 3a; a second impurity region 2 of the second conductivity type, which constitutes, together with the overflow drain region 22, a discharge path for excess charge that is generated in the light receiving part 3b; and areflective film 1b.

Description

technical field [0001] The present invention relates to a solid-state image pickup device used as a two-dimensional image sensor or the like. Background technique [0002] In recent years, there have been various proposals for image sensors capable of acquiring images of long-wavelength light. In particular, regarding an image sensor using a silicon substrate, since silicon has a smaller optical absorption coefficient for long-wavelength light than visible light, improvements for increasing sensitivity have been proposed. For example, according to Patent Document 1, sensitivity is improved by providing a reflective structure for reflecting at least long-wavelength light below the photodiode. [0003] The above-mentioned reflective structure is formed of an insulating film or a metal film. Therefore, the photodiode is a structure surrounded by the insulating film and the reflective structure on the surface of the substrate. If excess light strikes a photodiode and the photo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N5/359H04N5/374
CPCH01L27/1462H01L27/14656H01L27/1461H01L27/14612H01L27/14627H01L27/14636H01L27/1464H01L27/14643H01L27/14689H01L27/146H01L27/14618H01L27/14629
Inventor 田中浩司小田真弘
Owner 高塔伙伴半导体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com