Preparation method and application of a new type of inorganic hole transport layer material

A hole transport layer and electron transport layer technology, applied in the field of solar cells, can solve problems such as toxicity, unfavorable environmental protection, unfavorable mass production, etc., and achieve the effects of low cost, uniform size and excellent electrical performance

Active Publication Date: 2020-05-19
HUAZHONG UNIV OF SCI & TECH
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently, ternary copper-based transition metal oxides such as CuGaO 2 and CuCrO 2 , also used in perovskite solar cells as HTL, although they have achieved a photoelectric conversion efficiency of more than 18%, they contain toxic and scarce Ga, Cr elements, which are not conducive to environmental protection; and these hole transport layer nanoparticles require Prepared by solution method, not conducive to large-scale production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and application of a new type of inorganic hole transport layer material
  • Preparation method and application of a new type of inorganic hole transport layer material
  • Preparation method and application of a new type of inorganic hole transport layer material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] A kind of preparation method and application thereof of novel inorganic hole transport layer material MnS thin film among the present invention, comprise the following steps: (1) at first FTO substrate is cleaned, first carries out surface dirt to FTO substrate with cleaning liquid, subsequently will Put it into a mixed solution containing deionized water, absolute ethanol, and acetone with a volume ratio of 1:1:1, and perform ultrasonic cleaning for 30 minutes. This process is repeated three times, and then the FTO substrate is placed in a vacuum drying oven at 80°C. Bake for 120min, and finally treat with ultraviolet ozone for 15min; (2) Next, spin-coat on the FTO substrate with a 15mM isopropanol solution of bis(acetylacetonato)diisopropyl titanate, and the spin-coating parameter is 3500rpm , 25s, followed by annealing at 450°C for 30min to prepare dense TiO 2 ; (3) in the prepared dense TiO 2 On, spin-coated TiO 2 Slurry (18NR-T Dyesol), spin coating parameter is ...

Embodiment 2

[0046]A kind of preparation method and application thereof of novel inorganic hole transport layer material MnS thin film among the present invention, comprise the following steps: (1) at first FTO substrate is cleaned, first carries out surface dirt to FTO substrate with cleaning liquid, subsequently will Put it into a mixed solution containing deionized water, absolute ethanol, and acetone with a volume ratio of 1:1:1, and perform ultrasonic cleaning for 30 minutes. This process is repeated three times, and then the FTO substrate is placed in a vacuum drying oven at 80°C. Bake for 120min, and finally treat with ultraviolet ozone for 15min; (2) Next, use 10mM isopropanol solution of bis(acetylacetonato)diisopropyl titanate to spin-coat on the FTO substrate, and the spin-coating parameter is 5000rpm , 60s, followed by annealing at 400°C for 20min; (3) in the prepared dense TiO 2 On, spin-coated TiO 2 Slurry (18NR-T Dyesol), spin-coating parameter is 6000rpm, 20s, followed by ...

Embodiment 3

[0048] A kind of preparation method and application thereof of novel inorganic hole transport layer material MnS thin film among the present invention, comprise the following steps: (1) at first FTO substrate is cleaned, first carries out surface dirt to FTO substrate with cleaning liquid, subsequently will Put it into a mixed solution containing deionized water, absolute ethanol, and acetone with a volume ratio of 1:1:1, and perform ultrasonic cleaning for 30 minutes. This process is repeated three times, and then the FTO substrate is placed in a vacuum drying oven at 80°C. Bake for 120min, and finally treat with ultraviolet ozone for 15min; (2) Next, spin-coat on the FTO substrate with a 20mM isopropanol solution of bis(acetylacetonato)diisopropyl titanate, and the spin-coating parameter is 2000rpm , 20s, followed by annealing at 500°C for 60min; (3) in the prepared dense TiO 2 On, spin-coated TiO 2 Slurry (18NR-T Dyesol), spin-coating parameter is 3000rpm, 60s, followed by...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
densityaaaaaaaaaa
particle diameteraaaaaaaaaa
Login to view more

Abstract

The invention belongs to the field of solar cells, and specifically discloses a preparation method and application of a novel inorganic hole transport layer material, wherein the application is the application of MnS material as a hole transport layer material; the preparation method uses MnS powder as the source material, Using a vacuum coating machine, set the parameters so that the material density is 3.99g / cm 3 , the Z factor is 0.94, the evaporation is carried out in a vacuum environment, and the evaporation rate is such that a MnS layer can be deposited. The present invention uses MnS material as a new inorganic hole transport layer material to obtain an environmentally friendly inorganic hole transport layer material, which can be applied to devices such as perovskite solar cells, while ensuring high photoelectric conversion efficiency, The stability of the solar cell is greatly improved; and, by improving the parameters and conditions used in the evaporation process, the vacuum evaporation method is used for the first time to prepare a dense MnS film with uniform size nanoparticles.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and more specifically relates to a preparation method of a novel inorganic hole transport layer material and its application. Suitable for solar cells including perovskite solar cells, etc. Background technique [0002] Taking perovskite solar cells as an example, due to the advantages of suitable direct band gap, high light absorption coefficient and superior carrier bipolar transport performance, the photoelectric conversion efficiency of organic-inorganic hybrid perovskite solar cells is In less than ten years, it has increased nearly 8 times, and now it has reached 22.7%, which is comparable to the current silicon-based solar cells, but there are still some important problems that restrict the commercial application of perovskite solar cells. Hole transport layer (Hole transport layer, hereinafter referred to as HTL) is one of the key factors. In perovskite solar cells, the hole transpo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K30/151H10K30/10Y02E10/549
Inventor 杨君友李鑫赖晖李水萍姜庆辉谭尧
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap