Filter packaging structure and packaging method
A packaging structure and packaging method technology, which is applied in the manufacture of semiconductor devices, electrical solid state devices, semiconductor/solid state devices, etc., can solve problems such as poor filter size consistency, obstacles to miniaturization of RF front-end systems, and influence of filter parameters.
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Embodiment 1
[0090] see figure 1 , the present invention provides a packaging method for a filter packaging structure, the packaging method for the filter packaging structure includes the following steps:
[0091] 1) providing a high-resistance silicon substrate, the high-resistance silicon substrate includes opposite first surfaces and second surfaces;
[0092] 2) Forming a groove with a predetermined depth on the first surface of the high-resistance silicon substrate, and forming a through-silicon via in the high-resistance silicon substrate, and forming a through-silicon via along the high-resistance silicon substrate. The thickness direction runs through the high-resistance silicon substrate;
[0093] 3) forming an insulating layer on the inner wall of the TSV;
[0094] 4) Filling the TSV with a metal layer to form a conductive TSV structure, the conductive TSV structure includes a signal line and a connection ground line, the connection ground line surrounds the signal line, and ha...
Embodiment 2
[0142] Please combine Figure 2 to Figure 19 read on Figure 20, the present invention also provides a filter packaging structure, the filter packaging structure includes: a high-resistance silicon substrate 10, the high-resistance silicon substrate 10 includes a first surface and a second surface opposite; the high-resistance silicon substrate A groove 12 is formed on the first surface of 10, and a through-silicon hole 14 is formed in the high-resistance silicon substrate 10, and the through-silicon hole 14 penetrates the high-resistance silicon substrate 10 along the thickness direction of the high-resistance silicon substrate 10. Silicon substrate 10; a conductive TSV structure 16, the conductive TSV structure 16 is located in the TSV 14; the conductive TSV structure 16 includes a signal line 162 and a connection ground line 161, The connection ground line 161 surrounds the signal line 162 and has a distance from the signal line 162; the first ground line 191, the first gr...
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